SCHEMBL453582

SCHEMBL453582

C=C(C)C(=O)OC1C2CC3CC(C2)CC1(CC)C3

nearest known ligand 0.34

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 2/20 0.31
ALDH1A1 P00352 2/20 0.31
LMNA P02545 1/20 0.31
MEN1 O00255 2/20 0.30
KMT2A Q03164 2/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3053351 0.89 MEN1 (0.33) EPHX2ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL12346676 0.87 ALDH1A1 (0.33) EPHX2ALDH1A1
SCHEMBL3057478 0.86 TSHR (0.35) EPHX2ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL19052008 0.86 ALDH1A1 (0.31) ALDH1A1
SCHEMBL6749784 0.86 EPHX2 (0.30) EPHX2ALDH1A1
SCHEMBL214611 0.85 ALDH1A1 (0.32) ALDH1A1KMT2A
SCHEMBL5917750 0.83 EPHX2 (0.32) EPHX2ALDH1A1LMNAMEN1KMT2A
SCHEMBL6859010 0.81 ALDH1A1 (0.31) ALDH1A1LMNA
SCHEMBL108706 0.80 ALDH1A1 (0.33) ALDH1A1
SCHEMBL450766 0.80 ALDH1A1 (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115160495-A Photoresist film-forming resin containing maleimide structure and preparation method thereof 四川华造宏材科技有限公司 2022-10-11 CN claimed
CN-1171125-C Copolymer with nitrile and alcyl group and photoresist composite containing the copolymer ϣ 2004-10-13 CN claimed
US-12578644-B2 Upper film-forming composition and method for producing phase-separated pattern NISSAN CHEMICAL CORPORATION (JP) 2026-03-17 US disclosed
EP-4267708-B1 THERMALLY RESPONSIVE BRUSH POLYMERS HAVING A COPOLYMER BACKBONE AND COPOLYMER ARMS INFINEUM INT LTD (GB) 2025-07-02 EP disclosed
US-12281203-B2 Thermally responsive brush polymers having a copolymer backbone and copolymer arms INFINEUM INTERNATIONAL LIMITED (GB) 2025-04-22 US disclosed
US-20240309155-A1 Thermally Responsive Brush Polymers Having a Copolymer Backbone and Copolymer Arms INFINEUM INTERNATIONAL LIMITED (GB) 2024-09-19 US disclosed
CN-115160495-B Photoresist film-forming resin containing maleimide structure and preparation method thereof 四川华造宏材科技有限公司 2024-05-14 CN disclosed
US-20240124632-A1 Method for Producing Fluorine-Containing Polymer and Composition CENTRAL GLASS COMPANY, LIMITED (JP) 2024-04-18 US disclosed
CN-114560768-B Synthesis method of acrylic resin monomer for 193nm photoresist 河北凯诺中星科技有限公司 2024-03-15 CN disclosed
US-20240043593-A1 Fluorine-Containing Polymer CENTRAL GLASS COMPANY, LIMITED (JP) 2024-02-08 US disclosed
EP-4267708-A1 THERMALLY RESPONSIVE BRUSH POLYMERS HAVING A COPOLYMER BACKBONE AND COPOLYMER ARMS Infineum International Limited (GB) 2023-11-01 EP disclosed
US-6902772-B2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-06-07 US disclosed
CN-1184536-C Chemically enhanced possitive photoetching compositions SUMITOMO CHEMICAL CO (JP) 2005-01-12 CN disclosed
WO-2004050728-A2 METHOD OF PRODUCING (METH) ACRYLIC ACID DERIVATIVE POLYMER FOR RESIST TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-17 WO disclosed
US-20040006191-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO. LTD. (JP) 2004-01-08 US disclosed
US-20030118934-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-26 US disclosed
EP-1308782-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-07 EP disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
CN-1261171-A Chemically enhanced possitive photoetching compositions SUMITOMO CHEMICAL CO (JP) 2000-07-26 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12578644-B2 Upper film-forming composition and method for producing phase-separated pattern SMCHD1, SSU72, TPR EPHX2 1483/4885ALDH1A1 2401/4885LMNA 606/4885
US-20240124632-A1 Method for Producing Fluorine-Containing Polymer and Composition PFAS, AFF2, AFF1 EPHX2 328/4885ALDH1A1 865/4885LMNA 2606/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.