SCHEMBL1100537

SCHEMBL1100537

Nc1cccc(-c2cccc(NO)c2)c1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOA P21397 1/20 0.56
MAP4K4 O95819 3/20 0.47
DDX3X O00571 1/20 0.47
KDR P35968 1/20 0.46
MEN1 O00255 2/20 0.46
PSIP1 O75475 1/20 0.46
AXL P30530 1/20 0.46
MKNK1 Q9BUB5 1/20 0.46
MKNK2 Q9HBH9 1/20 0.46
KDM4E B2RXH2 2/20 0.45
MAPT P10636 2/20 0.45
TDP1 Q9NUW8 2/20 0.45
LMNA P02545 1/20 0.45
GAA P10253 1/20 0.45
GFER P55789 1/20 0.45
KMT2A Q03164 1/20 0.45
ALDH1A1 P00352 3/20 0.44
CYP3A4 P08684 1/20 0.44
CASP1 P29466 1/20 0.44
RECQL P46063 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13214340 0.87
SCHEMBL7806597 0.86 TAAR1 (0.52) MAOAKDRMEN1MAPTTDP1
SCHEMBL5194867 0.80 MGLL (0.61) CA2CA9CA14MGLLIDO1
SCHEMBL1100252 0.79 MAOA (0.56) MAOAMAP4K4DDX3XMEN1PSIP1
SCHEMBL5041729 0.79 MAP4K4 (0.58) MAOAMAP4K4DDX3XMEN1PSIP1
SCHEMBL29403794 0.79 MAOA (0.83) MAOAMAP4K4MEN1PSIP1AXL
SCHEMBL251095 0.79 MAOA (0.83) MAOAMAP4K4MEN1PSIP1AXL
SCHEMBL30500254 0.79 MAOA (0.83) MAOAMAP4K4MEN1PSIP1AXL
SCHEMBL310174 0.77 MAOA (0.79) MAOAMAP4K4MEN1PSIP1AXL
Methane SCHEMBL21853746 0.77 MAOA (0.79) MAOAMAP4K4MEN1PSIP1AXL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6316170-B2 COATING, EXPOSURE, DEVELOPMENT AND HEAT TREATMENT KABUSHIKI KAISHA TOSHIBA (JP) 2001-11-13 US claimed
US-20010006767-A1 Developing solution and method of forming polyimide pattern by using the developing solution YOSHIAKI KAWAMONZEN 2001-07-05 US claimed
US-8153260-B2 Composite material ADEKA CORPORATION (JP) 2012-04-10 US disclosed
US-7851121-B2 Photosensitive polyimide composition and polyimide precursor composition CENTRAL GLASS CO., LTD. (JP) 2010-12-14 US disclosed
US-20100112323-A1 COMPOSITE MATERIAL ADEKA CORPORATION (JP) 2010-05-06 US disclosed
US-6316170-B2 COATING, EXPOSURE, DEVELOPMENT AND HEAT TREATMENT KABUSHIKI KAISHA TOSHIBA (JP) 2001-11-13 US disclosed
US-20010006767-A1 Developing solution and method of forming polyimide pattern by using the developing solution YOSHIAKI KAWAMONZEN 2001-07-05 US disclosed
US-6183934-B1 FOE USE IN FORMATION OF PATTERN OF INSULATION FILM, PASSIVATION FILM, .ALPHA.-RAY SHIELDING FILM, OPTICAL WAVEGUIDE KABUSHIKI KAISHA TOSHIBA (JP) 2001-02-06 US disclosed
US-6159654-A Negative photosensitive polymer composition of a thermosetting polymer precursor curable by cyclodehydration upon heating KABUSHIKI KAISHA TOSHIBA (JP) 2000-12-12 US disclosed
US-6001517-A A THERMOSETTING POLYMER WHICH CAN BE CURED THROUGH CYCLODEHYDRATION UPON HEATING AND A CURE ACCELERATOR WHICH CAN BE DEACTIVATED OF ITS CURE ACCELERATION PROPERTY BY IRRIDIATION OF LIGHT KABUSHIKI KAISHA TOSHIBA (JP) 1999-12-14 US disclosed
US-5756650-A COMPOSITION COMPRISING POLYAMIC ACID, CURE ACCELERATOR SELECTED FROM GROUP CONSISTING OF NITROGEN-CONTAINING HETEROCYCLIC COMPOUND, AMINO ACID COMPOUND, AROMATIC COMPOUND HAVING TWO OR MORE HYDROXYL GROUPS KABUSHIKI KAISHA TOSHIBA (JP) 1998-05-26 US disclosed
US-5578697-A DIELECTRIC POLYMERS FOR ELECTRONICS KABUSHIKI KAISHA TOSHIBA (JP) 1996-11-26 US disclosed