Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 2/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.36 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 2/20 | 0.34 |
| ▸ | LMNA | P02545 | 4/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.33 |
| ▸ | USP2 | O75604 | 1/20 | 0.33 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.33 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | CNR1 | P21554 | 1/20 | 0.33 |
| ▸ | ACHE | P22303 | 1/20 | 0.33 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.33 |
| ▸ | HTR2A | P28223 | 1/20 | 0.33 |
| ▸ | HTR2C | P28335 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12939562 | 0.86 | — | — | |
| SCHEMBL3414698 | 0.85 | — | — | |
| SCHEMBL9610770 | 0.85 | MMP8 (0.31) | — | |
| SCHEMBL111929 | 0.85 | — | — | |
| SCHEMBL108733 | 0.85 | CTSK (0.31) | — | |
| SCHEMBL16591131 | 0.83 | — | — | |
| SCHEMBL3414602 | 0.82 | PRKCA (0.34) | — | |
| SCHEMBL11913016 | 0.82 | ABHD6 (0.33) | — | |
| SCHEMBL13007905 | 0.82 | — | — | |
| SCHEMBL111934 | 0.82 | CTSK (0.34) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 104 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20170075222-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9465298-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-20160103395-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-04-14 | — | — | US | disclosed |
| US-9291904-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9250530-B2 | — | — | 2016-02-02 | — | — | US | disclosed |
| US-9081279-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2015-07-14 | — | — | US | disclosed |
| US-20150168838-A1 | POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-06-18 | — | — | US | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248420-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080241737-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241742-A1 | SURFACE-TREATING AGENT FOR PATTERN FORMATION AND PATTERN-FORMING METHOD USING THE SURFACE-TREATING AGENT | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080206669-A1 | POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080241742-A1 | SURFACE-TREATING AGENT FOR PATTERN FORMATION AND PATTERN-FORMING METHOD USING THE SURFACE-TREATING AGENT | KRT18, FSCN1, SLC11A2 | MEN1 968/4885KMT2A 827/4885PTPN1 1693/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.