Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 11/20 | 0.52 |
| ▸ | EP300 | Q09472 | 3/20 | 0.42 |
| ▸ | KAT2B | Q92831 | 3/20 | 0.42 |
| ▸ | KAT8 | Q9H7Z6 | 3/20 | 0.42 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.42 |
| ▸ | NCOR2 | Q9Y618 | 1/20 | 0.42 |
| ▸ | LDHA | P00338 | 1/20 | 0.37 |
| ▸ | CTSB | P07858 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | APP | P05067 | 1/20 | 0.35 |
| ▸ | MAPT | P10636 | 1/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.35 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.35 |
| ▸ | CASP1 | P29466 | 1/20 | 0.35 |
| ▸ | SNCA | P37840 | 1/20 | 0.35 |
| ▸ | RECQL | P46063 | 1/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL667919 | 0.98 | IDO1 (0.50) | IDO1EP300KAT2BKAT8HDAC3 | |
| SCHEMBL3881583 | 0.83 | KMT2A (0.39) | IDO1EP300KAT2BKAT8LDHA | |
| Trifluoromethanesulfonic Acid SCHEMBL31168280 | 0.83 | LDHA (0.37) | IDO1EP300KAT2BKAT8HDAC3 | |
| Trifluoromethanesulfonic Acid SCHEMBL515598 | 0.83 | LDHA (0.37) | IDO1EP300KAT2BKAT8HDAC3 | |
| SCHEMBL3870651 | 0.80 | LDHA (0.35) | IDO1EP300KAT2BKAT8LDHA | |
| SCHEMBL6566223 | 0.80 | EP300 (0.47) | EP300KAT2BKAT8LDHATDP1 | |
| SCHEMBL516312 | 0.77 | CA1 (0.34) | IDO1EP300KAT2BKAT8LDHA | |
| SCHEMBL794829 | 0.76 | CYP1A2 (0.52) | CYP1A2MAPTTSHR | |
| Trifluoromethanesulfonic Acid SCHEMBL6566389 | 0.74 | CDK2 (0.38) | LDHACYP1A2HPGDHSD17B10 | |
| SCHEMBL13088233 | 0.73 | IDO1 (0.43) | IDO1EP300KAT2BKAT8HDAC3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 251 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170277037-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-28 | — | — | US | disclosed |
| US-20170277037-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-28 | — | — | US | disclosed |
| EP-2692762-B1 | ELECTRICALLY CONDUCTIVE COMPOSITION, ELECTRICALLY CONDUCTIVE FILM USING SAID COMPOSITION AND PRODUCTION METHOD THEREFOR | FUJIFILM CORP (JP) | 2017-09-27 | — | — | EP | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9758609-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| EP-1736829-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-12-27 | — | — | EP | disclosed |
| EP-1726608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-11-29 | — | — | EP | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-7108955-B2 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-09-19 | — | — | US | disclosed |
| US-20050171226-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2005-08-04 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |