Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 3/20 | 0.52 |
| ▸ | CYP2A6 | P11509 | 3/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.31 |
| ▸ | GRIN2D | O15399 | 1/20 | 0.30 |
| ▸ | GRIN3B | O60391 | 1/20 | 0.30 |
| ▸ | GRIN1 | Q05586 | 1/20 | 0.30 |
| ▸ | GRIN2A | Q12879 | 1/20 | 0.30 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.30 |
| ▸ | GRIN2C | Q14957 | 1/20 | 0.30 |
| ▸ | GRIN3A | Q8TCU5 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | PABPC1 | P11940 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL113203 | 0.76 | IDO1 (0.52) | CYP1A2TSHRMAPT | |
| SCHEMBL12577660 | 0.76 | GABRA1 (0.31) | — | |
| SCHEMBL135116 | 0.76 | IDO1 (0.47) | ALDH1A1SMN1; SMN2KMT2AKDM4EMAPT | |
| Hydrochloric Acid SCHEMBL667919 | 0.74 | IDO1 (0.50) | CYP1A2TSHRMAPT | |
| SCHEMBL12256955 | 0.74 | IDO1 (0.46) | ALDH1A1MEN1KMT2AMAPT | |
| SCHEMBL4569605 | 0.72 | ACHE (0.39) | CYP2A6ALDH1A1TSHR | |
| SCHEMBL161370 | 0.72 | CYP1A2 (1.00) | CYP1A2CYP2A6ALDH1A1TSHRSMN1; SMN2 | |
| SCHEMBL29363045 | 0.72 | CYP1A2 (1.00) | CYP1A2CYP2A6ALDH1A1TSHRSMN1; SMN2 | |
| SCHEMBL29447796 | 0.72 | CYP1A2 (1.00) | CYP1A2CYP2A6ALDH1A1TSHRSMN1; SMN2 | |
| SCHEMBL9793611 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 88 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170038679-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND | JSR CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9523911-B2 | Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound | JSR CORPORATION (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-20160109803-A1 | PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-21 | — | — | US | disclosed |
| US-9316908-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9235116-B2 | Actinic-ray- or radiation sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9223219-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20110091820-A1 | RESIST PROCESSING METHOD | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-04-21 | — | — | US | disclosed |
| US-20110076615-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-7897821-B2 | Sulfonium compound | JSR CORPORATION (JP) | 2011-03-01 | — | — | US | disclosed |
| US-20110014569-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER | JSR CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100279226-A1 | RESIST PROCESSING METHOD | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-11-04 | — | — | US | disclosed |
| US-20100273113-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100273112-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20100230136-A1 | METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-09-16 | — | — | US | disclosed |
| US-7235343-B2 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-26 | — | — | US | disclosed |
| US-7217492-B2 | Onium salt compound and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-05-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170038679-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND | RER1, ASIC1, GAR1 | CYP1A2 2485/4885CYP2A6 1767/4885ALDH1A1 1136/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.