Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28150815 | 0.85 | — | — | |
| SCHEMBL329203 | 0.83 | HTT (0.32) | HTT | |
| SCHEMBL9845415 | 0.75 | — | — | |
| SCHEMBL28242776 | 0.75 | — | — | |
| SCHEMBL230819 | 0.75 | — | — | |
| SCHEMBL431586 | 0.75 | — | — | |
| SCHEMBL359593 | 0.73 | MGLL (0.31) | — | |
| SCHEMBL4785835 | 0.69 | — | — | |
| SCHEMBL2102625 | 0.69 | — | — | |
| SCHEMBL467755 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20050255714-A1 | Method for silicon nitride chemical vapor deposition | APPLIED MATERIALS, INC. | 2005-11-17 | — | — | US | claimed |
| US-20260076110-A1 | HYBRID ATOMIC LAYER DEPOSITION | LAM RES CORP (US) | 2026-03-12 | — | — | US | disclosed |
| US-20250372367-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RES CORP (US) | 2025-12-04 | — | — | US | disclosed |
| US-20250197996-A1 | LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-06-19 | — | — | US | disclosed |
| US-20250188609-A1 | SEAM-FREE AND CRACK-FREE DEPOSITION | LAM RES CORP (US) | 2025-06-12 | — | — | US | disclosed |
| US-20250166989-A1 | THERMAL FILM DEPOSITION | LAM RES CORP (US) | 2025-05-22 | — | — | US | disclosed |
| US-20250054747-A1 | CONFORMAL DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-02-13 | — | — | US | disclosed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | disclosed |
| US-20250014890-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | LAM RESEARCH CORPORATION | 2025-01-09 | — | — | US | disclosed |
| US-20240410053-A1 | CONFORMAL SILICON OXIDE DEPOSITION USING AMINOSILANE AND CHLOROSILANE PRECURSORS | LAM RES CORP (US) | 2024-12-12 | — | — | US | disclosed |
| US-7601652-B2 | Method for treating substrates and films with photoexcitation | APPLIED MATERIALS, INC. (US) | 2009-10-13 | — | — | US | disclosed |
| US-20090242957-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-10-01 | — | — | US | disclosed |
| US-20090090952-A1 | PLASMA SURFACE TREATMENT FOR SI AND METAL NANOCRYSTAL NUCLEATION | APPLIED MATERIALS, INC. | 2009-04-09 | — | — | US | disclosed |
| US-20090020802-A1 | INTEGRATED SCHEME FOR FORMING INTER-POLY DIELECTRICS FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-01-22 | — | — | US | disclosed |
| US-20080153271-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. | 2008-06-26 | — | — | US | disclosed |
| US-20060286774-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS. INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286775-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286820-A1 | Method for treating substrates and films with photoexcitation | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286776-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20040203255-A1 | Method of forming Si-containing thin film | MITSUBISHI MATERIALS CORPORATION (JP) | 2004-10-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250014890-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | CNTN1, NCDN, SEPTIN6 | HTT 1577/4885 |
| US-20260076110-A1 | HYBRID ATOMIC LAYER DEPOSITION | NOS2, SFN, DSTYK | HTT 2997/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.