SCHEMBL118602

SCHEMBL118602

CC(O)(CC1CC2C=CC1C2)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 8/20 0.39
ALDH1A1 P00352 4/20 0.39
MEN1 O00255 3/20 0.35
KMT2A Q03164 3/20 0.35
HTT P42858 1/20 0.35
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
CYP2C19 P33261 1/20 0.34
ATM Q13315 1/20 0.34
TDP1 Q9NUW8 2/20 0.33
USP2 O75604 1/20 0.33
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL219253 0.86 KDM4E (0.41) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL15800081 0.83 KDM4E (0.37) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL13324800 0.82 KDM4E (0.41) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL12577685 0.82 KDM4E (0.41) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL3676593 0.82 KDM4E (0.38) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL3680032 0.82 KDM4E (0.38) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL18714193 0.82 KDM4E (0.38) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL75457 0.82 KDM4E (0.38) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL19380643 0.82 KDM4E (0.38) KDM4EALDH1A1MEN1KMT2AHTT
SCHEMBL15805635 0.82 KDM4E (0.38) KDM4EALDH1A1MEN1KMT2AHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 296 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914291-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11835859-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-11829067-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-28 US disclosed
US-6548219-B2 Transparent to deep ultraviolet (DUV) radiation INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-04-15 US disclosed
US-6509134-B2 Used to generate resist images; in the manufacture of integrated circuits INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-01-21 US disclosed
US-20020146638-A1 Norbornene fluoroacrylate copolymers and process for use thereof GLOBALFOUNDRIES U.S. INC. 2002-10-10 US disclosed
US-20020102490-A1 Substituted norbornene fluoroacrylate copolymers and use thereof lithographic photoresist compositions GLOBALFOUNDRIES U.S. INC. 2002-08-01 US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 KDM4E 3855/4885ALDH1A1 4867/4885MEN1 3483/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 KDM4E 778/4885ALDH1A1 4741/4885MEN1 4565/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.