Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.36 |
| ▸ | CA2 | P00918 | 2/20 | 0.36 |
| ▸ | CA9 | Q16790 | 2/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | PPARG | P37231 | 1/20 | 0.31 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.31 |
| ▸ | PIK3CD | O00329 | 1/20 | 0.31 |
| ▸ | PIK3CA | P42336 | 1/20 | 0.31 |
| ▸ | PIK3CB | P42338 | 1/20 | 0.31 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.31 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13015793 | 0.83 | CA1 (0.34) | CA1CA2CA9KMT2APIK3CD | |
| SCHEMBL14479162 | 0.82 | CA12 (0.38) | CA1CA2CA9HDAC1 | |
| SCHEMBL2618561 | 0.81 | CA1 (0.40) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL825692 | 0.79 | DRD2 (0.39) | KMT2AMEN1LMNA | |
| SCHEMBL825675 | 0.78 | — | — | |
| SCHEMBL3753755 | 0.74 | CA1 (0.42) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL6479936 | 0.74 | CA2 (0.45) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL16662465 | 0.73 | CA12 (0.35) | CA1CA2CA9LMNA | |
| SCHEMBL112130 | 0.73 | CA1 (0.44) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL6900759 | 0.73 | CA2 (0.46) | CA1CA2CA9KMT2ALMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8227183-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2012-07-24 | — | — | US | disclosed |
| US-8039197-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2011-10-18 | — | — | US | disclosed |
| US-7955780-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-06-07 | — | — | US | disclosed |
| US-20100203451-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-08-12 | — | — | US | disclosed |
| US-7695892-B2 | Resist composition and pattern-forming method using same | FUJIFILM CORPORATION (JP) | 2010-04-13 | — | — | US | disclosed |
| US-7687219-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2010-03-30 | — | — | US | disclosed |
| US-7648817-B2 | Resin decomposition by acid; increase solubility of alkaline developer | FUJIFILM CORPORATION (JP) | 2010-01-19 | — | — | US | disclosed |
| US-7632623-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2009-12-15 | — | — | US | disclosed |
| US-20090181323-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-07-16 | — | — | US | disclosed |
| US-7531287-B2 | Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure | FUJIFILM CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-20080241737-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080206669-A1 | POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-7338744-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2008-03-04 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070105045-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION | 2007-05-10 | — | — | US | disclosed |