Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 7/20 | 0.42 |
| ▸ | CA2 | P00918 | 7/20 | 0.42 |
| ▸ | CA9 | Q16790 | 6/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | PPARG | P37231 | 1/20 | 0.36 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.36 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.36 |
| ▸ | STS | P08842 | 1/20 | 0.34 |
| ▸ | PIK3CD | O00329 | 1/20 | 0.34 |
| ▸ | PIK3CA | P42336 | 1/20 | 0.34 |
| ▸ | PIK3CB | P42338 | 1/20 | 0.34 |
| ▸ | CXCR2 | P25025 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | CXCR1 | P25024 | 1/20 | 0.33 |
| ▸ | CA12 | O43570 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
| ▸ | CA5A | P35218 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9609280 | 0.89 | CA1 (0.45) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL9966114 | 0.83 | KMT2A (0.43) | CA1CA2KMT2AMEN1STS | |
| SCHEMBL9966121 | 0.83 | LMNA (0.38) | CA1CA2CA9LMNACXCR2 | |
| SCHEMBL9966117 | 0.83 | CA1 (0.46) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL9966120 | 0.83 | CA2 (0.35) | CA1CA2CA9CXCR2CXCR1 | |
| SCHEMBL3754195 | 0.83 | DRD2 (0.46) | KMT2AMEN1LMNA | |
| SCHEMBL16519694 | 0.82 | CA1 (0.42) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL6479936 | 0.81 | CA2 (0.45) | CA1CA2CA9KMT2AMEN1 | |
| SCHEMBL2618584 | 0.81 | PPARG (0.43) | CA1CA2CA9KMT2ALMNA | |
| SCHEMBL16284082 | 0.80 | CA1 (0.33) | CA1CA2CA9CXCR2CXCR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11022881-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| US-10754248-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-08-25 | — | — | US | disclosed |
| US-20190324367-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-24 | — | — | US | disclosed |
| US-10180626-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-15 | — | — | US | disclosed |
| US-20180088464-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-7648817-B2 | Resin decomposition by acid; increase solubility of alkaline developer | FUJIFILM CORPORATION (JP) | 2010-01-19 | — | — | US | disclosed |
| US-7632623-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2009-12-15 | — | — | US | disclosed |
| US-20090181323-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-07-16 | — | — | US | disclosed |
| US-7531287-B2 | Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure | FUJIFILM CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| US-7442490-B2 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-20080206669-A1 | POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20070218405-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| EP-1835340-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM Corporation (JP) | 2007-09-19 | — | — | EP | disclosed |
| US-20070212645-A1 | Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-09-13 | — | — | US | disclosed |
| US-20070105045-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM CORPORATION | 2007-05-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180088464-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | LSM14A, PAG1, EWSR1 | CA1 2273/4885CA2 1582/4885CA9 1872/4885 |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | POLR2H, POLQ, RXRA | CA1 526/4885CA2 1388/4885CA9 2860/4885 |
| US-10180626-B2 | Sulfonium salt, resist composition, and patterning process | LSM14A, PAG1, EWSR1 | CA1 2273/4885CA2 1582/4885CA9 1872/4885 |
| US-10754248-B2 | Sulfonium salt, resist composition, and patterning process | GPS1, SPIN2B, SPIN1 | CA1 324/4885CA2 134/4885CA9 184/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.