SCHEMBL11922902

SCHEMBL11922902

CCC(C)c1cccc(OC(C)OCCOc2c(-c3ccccc3)cccc2-c2ccccc2)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR1 O14842 1/20 0.36
KDM4E B2RXH2 4/20 0.34
PPARA Q07869 1/20 0.34
PKM P14618 1/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
TSHR P16473 2/20 0.33
HDAC4 P56524 1/20 0.33
HDAC2 Q92769 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
ALDH1A1 P00352 3/20 0.33
LMNA P02545 2/20 0.33
SLC7A5 Q01650 1/20 0.33
USP2 O75604 1/20 0.33
MAPT P10636 1/20 0.33
MAPK1 P28482 1/20 0.33
HTT P42858 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
PTGS1 P23219 1/20 0.33
TAAR1 Q96RJ0 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL682221 0.88 SLC7A5 (0.41) KDM4EPPARAPKMMEN1KMT2A
SCHEMBL10182929 0.87 TSHR (0.41) KDM4EPPARAMEN1KMT2ATSHR
SCHEMBL15503561 0.84 FFAR1 (0.35) FFAR1KDM4EPPARAPKMMEN1
SCHEMBL10149058 0.84 MAPT (0.35) ALDH1A1LMNAMAPTHTT
SCHEMBL10148506 0.84 PDE4B (0.35) KDM4EPKMMEN1KMT2AALDH1A1
SCHEMBL682270 0.81 AKR1C3 (0.39) KDM4EMEN1KMT2ATSHRALDH1A1
SCHEMBL10088193 0.81 SLC7A5 (0.40) KDM4EPPARAPKMMEN1KMT2A
SCHEMBL2758509 0.80 TDP1 (0.34) FFAR1PPARAMEN1KMT2ATSHR
SCHEMBL10148533 0.80 KDM4E (0.37) KDM4EPPARAPKMMEN1KMT2A
SCHEMBL13359779 0.80 REN (0.35) PPARAPKMMEN1KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 US disclosed