SCHEMBL10148533

SCHEMBL10148533

CCC(C)c1ccc(OC(C)OCCOc2c(-c3ccccc3)cccc2-c2ccccc2)c(C(=O)OC)c1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.37
PKM P14618 1/20 0.37
MEN1 O00255 3/20 0.37
KMT2A Q03164 3/20 0.37
MAPT P10636 4/20 0.34
ALDH1A1 P00352 4/20 0.34
HSP90AA1 P07900 3/20 0.34
HTT P42858 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
USP2 O75604 2/20 0.34
LMNA P02545 1/20 0.34
MAPK1 P28482 1/20 0.34
RECQL P46063 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP2C9 P11712 1/20 0.34
HPGD P15428 1/20 0.34
CYP2C19 P33261 1/20 0.34
ACLY P53396 1/20 0.34
CD274 Q9NZQ7 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13920797 0.87 NR3C1 (0.36) KDM4EMEN1KMT2AMAPTALDH1A1
SCHEMBL14086705 0.86 RAB9A (0.43) KDM4EMEN1KMT2AMAPTALDH1A1
SCHEMBL10149078 0.86 MAPT (0.35) KDM4EPKMMEN1KMT2AMAPT
SCHEMBL10149058 0.85 MAPT (0.35) MAPTALDH1A1HTTLMNACD274
SCHEMBL10148506 0.83 PDE4B (0.35) KDM4EPKMMEN1KMT2AMAPT
SCHEMBL12054789 0.81 NPSR1 (0.39) KDM4EPKMMEN1KMT2AMAPT
SCHEMBL11922902 0.80 FFAR1 (0.36) KDM4EPKMMEN1KMT2AMAPT
SCHEMBL12056817 0.79 CA1 (0.44) KDM4EMEN1KMT2AMAPTALDH1A1
SCHEMBL10138857 0.78 NPC1 (0.39) KDM4EPKMKMT2AMAPTALDH1A1
SCHEMBL682221 0.78 SLC7A5 (0.41) KDM4EPKMMEN1KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8092976-B2 High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed