SCHEMBL11977965

SCHEMBL11977965

O=C(OCC(F)S(=O)(=O)O)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.54

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
PRKCA P17252 1/20 0.54
PKM P14618 1/20 0.48
CYP17A1 P05093 2/20 0.44
CYP19A1 P11511 2/20 0.44
ALDH1A1 P00352 9/20 0.44
MAPT P10636 4/20 0.44
KMT2A Q03164 3/20 0.44
NPSR1 Q6W5P4 3/20 0.44
MEN1 O00255 2/20 0.44
ATM Q13315 1/20 0.38
GAA P10253 2/20 0.38
XBP1 P17861 1/20 0.36
RECQL P46063 1/20 0.36
CYP1A2 P05177 1/20 0.35
CYP3A4 P08684 1/20 0.35
CYP2D6 P10635 1/20 0.35
CYP2C9 P11712 1/20 0.35
CYP2C19 P33261 1/20 0.35
LMNA P02545 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17425998 0.89 PRKCA (0.44) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL18232584 0.82 PRKCA (0.51) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL10211805 0.82 PRKCA (0.61) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL10343826 0.81 PRKCA (0.50) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL24028110 0.80 NPSR1 (0.41) PRKCAPKMALDH1A1NPSR1LMNA
SCHEMBL12257077 0.80 PRKCA (0.49) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL24028093 0.79 NPSR1 (0.40) PRKCAPKMALDH1A1MAPTKMT2A
SCHEMBL15326221 0.79 PRKCA (0.44) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL17281536 0.79 PRKCA (0.58) PRKCAPKMCYP17A1CYP19A1ALDH1A1
SCHEMBL21398763 0.78 PRKCA (0.34) PRKCAPKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11156917-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-10-26 US disclosed
US-20210318616-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-10-14 US disclosed
US-20210286263-A1 ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-09-16 US disclosed
US-11073762-B2 Actinic ray-sensitive or radiation sensitive resin composition, actinic raysensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and photoacid generator FUJIFILM CORPORATION (JP) 2021-07-27 US disclosed
US-20200183274-A1 PHOTOSENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2020-06-11 US disclosed
US-20190377261-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-12-12 US disclosed
US-20190294043-A1 ACTINIC RAY-SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTINIC RAYSENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND PHOTOACID GENERATOR FUJIFILM CORPORATION (JP) 2019-09-26 US disclosed
US-20190294042-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-09-26 US disclosed
US-9354523-B2 Composition for resist pattern-refinement, and fine pattern-forming method JSR CORPORATION (JP) 2016-05-31 US disclosed
US-9354523-B2 Composition for resist pattern-refinement, and fine pattern-forming method JSR CORPORATION (JP) 2016-05-31 US disclosed
US-20160011513-A1 COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-01-14 US disclosed
US-20160011513-A1 COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-01-14 US disclosed
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2015-11-26 US disclosed
WO-2014133187-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND FUJIFILM CORPORATION (JP) 2014-09-04 WO disclosed
WO-2014119698-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-08-07 WO disclosed
WO-2014104400-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-07-03 WO disclosed
US-8236477-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-07 US disclosed
US-20100183981-A1 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-07-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11073762-B2 Actinic ray-sensitive or radiation sensitive resin composition, actinic raysensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and photoacid generator PRKAR2A, PRKAR2B, RER1 PRKCA 62/4885PKM 2421/4885CYP17A1 4351/4885
US-20150338736-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN AFF1, MACF1, RER1 PRKCA 3896/4885PKM 4709/4885CYP17A1 2819/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 PRKCA 4420/4885PKM 3853/4885CYP17A1 3270/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.