Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FKBP1A | P62942 | 3/20 | 0.34 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.32 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.32 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.32 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.32 |
| ▸ | HMGCR | P04035 | 1/20 | 0.32 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.32 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12939478 | 0.89 | PDK1 (0.32) | PDK1PDK2PDK3PDK4HSD11B1 | |
| SCHEMBL10094772 | 0.89 | PDK1 (0.32) | FKBP1APDK1PDK2PDK3PDK4 | |
| SCHEMBL12939474 | 0.87 | PDK1 (0.31) | PDK1PDK2PDK3PDK4HSD11B1 | |
| SCHEMBL15116339 | 0.87 | ALDH1A1 (0.30) | ALDH1A1 | |
| SCHEMBL18477661 | 0.86 | PDK1 (0.31) | PDK1PDK2PDK3PDK4HSD11B1 | |
| SCHEMBL19335333 | 0.85 | PDK1 (0.35) | PDK1PDK2PDK3PDK4HSD11B1 | |
| SCHEMBL6367523 | 0.85 | FKBP1A (0.34) | FKBP1AHMGCRALDH1A1 | |
| SCHEMBL15116348 | 0.84 | PDK1 (0.32) | FKBP1APDK1PDK2PDK3PDK4 | |
| SCHEMBL132686 | 0.83 | FKBP1A (0.35) | FKBP1AHMGCRRIPK1ALDH1A1 | |
| SCHEMBL14195306 | 0.82 | CYP3A4 (0.30) | HMGCRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 231 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-20170210836-A1 | POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-27 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9645493-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9632417-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-09 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070254235-A1 | SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-11-01 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070122736-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-31 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070003867-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170038683-A1 | COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | WDR1, WDR26, LBR | FKBP1A 3771/4885PDK1 4864/4885PDK2 4746/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | FKBP1A 3867/4885PDK1 2742/4885PDK2 3648/4885 |
| US-20170131635-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-2, H1-0, H1-4 | FKBP1A 3004/4885PDK1 4321/4885PDK2 4562/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.