Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9244483 | 0.98 | — | — | |
| SCHEMBL9238596 | 0.98 | ADORA3 (0.32) | ADORA3 | |
| SCHEMBL9244446 | 0.97 | ADORA3 (0.31) | ADORA3 | |
| SCHEMBL9238983 | 0.85 | — | — | |
| SCHEMBL9241201 | 0.85 | — | — | |
| SCHEMBL9241420 | 0.84 | — | — | |
| SCHEMBL9241113 | 0.83 | HMGCR (0.30) | HMGCR | |
| SCHEMBL9238590 | 0.83 | HMGCR (0.33) | HMGCRADORA3 | |
| SCHEMBL9241346 | 0.83 | HMGCR (0.33) | HMGCRADORA3 | |
| SCHEMBL132916 | 0.83 | HMGCR (0.30) | HMGCR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-9316909-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9256127-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-09 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20120135350-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120058428-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120009529-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120009527-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110033803-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20100304295-A1 | ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100304297-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | HMGCR 4394/4885ADORA3 2599/4885 |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-2 | HMGCR 1623/4885ADORA3 559/4885 |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RER1, AFF1, RFT1 | HMGCR 2254/4885ADORA3 2965/4885 |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RPS4Y1, ETV6, RPS4X | HMGCR 4073/4885ADORA3 3964/4885 |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, H1-3, H1-2 | HMGCR 2878/4885ADORA3 583/4885 |
| US-20100304295-A1 | ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | COASY, DHCR24, HCAR1 | HMGCR 134/4885ADORA3 2798/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.