SCHEMBL120308

SCHEMBL120308

CCC(C)(C)C(=O)OC1(C)CCCCC12CCCC2

nearest known ligand 0.34

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 1/20 0.30
ADORA3 P0DMS8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9244483 0.98
SCHEMBL9238596 0.98 ADORA3 (0.32) ADORA3
SCHEMBL9244446 0.97 ADORA3 (0.31) ADORA3
SCHEMBL9238983 0.85
SCHEMBL9241201 0.85
SCHEMBL9241420 0.84
SCHEMBL9241113 0.83 HMGCR (0.30) HMGCR
SCHEMBL9238590 0.83 HMGCR (0.33) HMGCRADORA3
SCHEMBL9241346 0.83 HMGCR (0.33) HMGCRADORA3
SCHEMBL132916 0.83 HMGCR (0.30) HMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-20160238930-A1 HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-18 US disclosed
US-20160238930-A1 HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-18 US disclosed
US-9316909-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
US-9256127-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-09 US disclosed
US-9235122-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-12 US disclosed
US-9235122-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-12 US disclosed
US-20150323865-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-12 US disclosed
US-20150323865-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-12 US disclosed
US-20120135350-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120077121-A1 FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-29 US disclosed
US-20120058428-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-08 US disclosed
US-20120009529-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-23 US disclosed
US-20110033803-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20100304295-A1 ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
US-20100304297-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS AFF1, H1-0, FRG1 HMGCR 4394/4885ADORA3 2599/4885
US-20160238930-A1 HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-3, H1-0, H1-2 HMGCR 1623/4885ADORA3 559/4885
US-20120077121-A1 FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RER1, AFF1, RFT1 HMGCR 2254/4885ADORA3 2965/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X HMGCR 4073/4885ADORA3 3964/4885
US-20150323865-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-0, H1-3, H1-2 HMGCR 2878/4885ADORA3 583/4885
US-20100304295-A1 ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS COASY, DHCR24, HCAR1 HMGCR 134/4885ADORA3 2798/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.