Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.44 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | MEN1 | O00255 | 2/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | NPC1 | O15118 | 2/20 | 0.37 |
| ▸ | RAB9A | P51151 | 2/20 | 0.37 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.34 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | SLC7A5 | Q01650 | 1/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20691920 | 0.85 | ESR1 (0.31) | — | |
| SCHEMBL15382968 | 0.82 | ALDH1A1 (0.43) | ALDH1A1TSHRMEN1KMT2ATDP1 | |
| SCHEMBL15382955 | 0.80 | ALDH1A1 (0.42) | ALDH1A1TSHRMEN1KMT2ATDP1 | |
| SCHEMBL14235191 | 0.79 | FDFT1 (0.34) | MEN1KMT2ACYP2D6CYP2C19 | |
| SCHEMBL13380274 | 0.78 | ALDH1A1 (0.56) | ALDH1A1TSHRMEN1KMT2ATDP1 | |
| SCHEMBL14177779 | 0.78 | ALDH1A1 (0.38) | ALDH1A1TSHRMEN1KMT2ATDP1 | |
| SCHEMBL18372601 | 0.77 | ELANE (0.37) | MAPTGAA | |
| SCHEMBL11113379 | 0.77 | ALDH1A1 (0.62) | ALDH1A1TSHRMEN1KMT2ATDP1 | |
| SCHEMBL16247796 | 0.76 | ALDH1A1 (0.35) | ALDH1A1TSHRMEN1KMT2ATDP1 | |
| SCHEMBL13380342 | 0.76 | ALDH1A1 (0.47) | ALDH1A1TSHRMEN1KMT2ATDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180210339-A1 | RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2018-07-26 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-20170121437-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9625813-B2 | Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound | FUJIFILM CORPORATION (JP) | 2017-04-18 | — | — | US | disclosed |
| US-20160291461-A1 | PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD | FUJIFILM CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9448477-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-20160147154-A1 | PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147155-A1 | PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-9285679-B2 | Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2016-03-15 | — | — | US | disclosed |
| US-9170487-B2 | Resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-10-27 | — | — | US | disclosed |
| US-20080254386-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-16 | — | — | US | disclosed |
| US-20080166655-A1 | Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method | OGATA TOSHIYUKI | 2008-07-10 | — | — | US | disclosed |
| US-20080153030-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-20080124653-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080118863-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-22 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080166655-A1 | Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method | CRHR1, ADH1C, ADH1A | ALDH1A1 253/4885TSHR 1579/4885MEN1 3193/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.