SCHEMBL12376769

SCHEMBL12376769

C=Cc1ccc(C(=O)OCCS(=O)(=O)O)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.43
SNCA P37840 1/20 0.41
STS P08842 4/20 0.39
TSHR P16473 3/20 0.39
ESR1 P03372 2/20 0.39
ALDH1A1 P00352 1/20 0.39
CHRM1 P11229 1/20 0.39
SLC6A2 P23975 1/20 0.39
KDR P35968 1/20 0.39
TAS1R3 Q7RTX0 2/20 0.38
TAS1R1 Q7RTX1 2/20 0.38
LMNA P02545 3/20 0.37
CYP1A2 P05177 2/20 0.37
CYP2C19 P33261 2/20 0.37
CYP2D6 P10635 1/20 0.37
MAPK1 P28482 1/20 0.37
NR1H2 P55055 1/20 0.37
RNASEL Q05823 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
CA1 P00915 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29323779 0.88 TSHR (0.43) TDP1SNCASTSTSHRESR1
SCHEMBL27600533 0.87 TSHR (0.48) TDP1STSTSHRESR1ALDH1A1
SCHEMBL12376761 0.86 HRH3 (0.38) TDP1SNCASTSALDH1A1MAPK1
SCHEMBL31509594 0.85 STS (0.37) TDP1SNCASTSTSHRESR1
SCHEMBL26417020 0.85 SNCA (0.49) TDP1SNCATSHRESR1ALDH1A1
SCHEMBL18776029 0.82 STS (0.43) TDP1STSTSHRESR1ALDH1A1
SCHEMBL26417026 0.82 TDP1 (0.58) TDP1SNCASTSTSHRESR1
SCHEMBL29323769 0.81 TDP1 (0.44) TDP1ESR1ALDH1A1LMNA
SCHEMBL10594109 0.80 SNCA (0.45) TDP1SNCATSHRESR1ALDH1A1
SCHEMBL28809943 0.80 SNCA (0.45) TDP1SNCATSHRESR1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-11366386-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-06-21 US disclosed
US-11231649-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-25 US disclosed
US-20190354016-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190354017-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 US disclosed
US-20180072930-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, AND METHOD FOR MANUFACTURING A BIO-ELECTRODE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-15 US disclosed
US-9663593-B2 Polymer compound for a conductive polymer and method for producing same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-9601229-B2 Conductive polymer composite comprising a sulfo group-containing dopant polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-21 US disclosed
US-20160064112-A1 CONDUCTIVE POLYMER COMPOSITE AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-03 US disclosed
US-20160017068-A1 POLYMER COMPOUND FOR A CONDUCTIVE POLYMER AND METHOD FOR PRODUCING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-21 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR TDP1 3429/4885SNCA 3592/4885STS 1859/4885
US-11366386-B2 Patterning process FEM1B, EGLN1, TET1 TDP1 1986/4885SNCA 3719/4885STS 2708/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X TDP1 3710/4885SNCA 2962/4885STS 228/4885
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SLC9A1, FN1, EPCAM TDP1 3459/4885SNCA 3863/4885STS 2126/4885
US-20190354017-A1 PATTERNING PROCESS FEM1B, EGLN1, TET1 TDP1 1986/4885SNCA 3719/4885STS 2708/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.