SCHEMBL12415083

SCHEMBL12415083

CCOC(C)Oc1cc(C)c(C(c2ccc3cc(C(c4cc(C)c(O)cc4C)c4cc(C)c(O)cc4C)ccc3c2)c2cc(C)c(O)cc2C)cc1C

nearest known ligand 0.47

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 1/20 0.34
AKR1C2 P52895 1/20 0.34
ALDH1A1 P00352 1/20 0.32
GAA P10253 1/20 0.32
MAPT P10636 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
ESR1 P03372 1/20 0.31
TRPA1 O75762 1/20 0.31
PTGS1 P23219 1/20 0.31
CACNA1C Q13936 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14477996 0.86 GAA (0.36) AKR1C3AKR1C2ALDH1A1GAAMAPT
SCHEMBL14477992 0.86 GAA (0.36) AKR1C3AKR1C2ALDH1A1GAAMAPT
SCHEMBL14477991 0.86 GAA (0.36) AKR1C3AKR1C2ALDH1A1GAAMAPT
SCHEMBL12415086 0.79 TRPM8 (0.33)
SCHEMBL10051844 0.79 CYP3A4 (0.43) AKR1C3AKR1C2ALDH1A1MAPTTRPA1
SCHEMBL10296819 0.75 TRPA1 (0.44) ALDH1A1GAAMAPTTRPA1PTGS1
SCHEMBL14477988 0.74 AKR1C3 (0.33) AKR1C3AKR1C2
SCHEMBL14477984 0.74 AKR1C3 (0.33) AKR1C3AKR1C2
SCHEMBL12415091 0.74 AKR1C3 (0.33) AKR1C3AKR1C2
SCHEMBL14421095 0.71 LMNA (0.34) AKR1C3AKR1C2GAAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2808736-B1 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2018-07-18 EP disclosed
EP-2808736-A2 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-12-03 EP disclosed
US-8802353-B2 Compound for resist and radiation-sensitive composition specification MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-08-12 US disclosed
US-8802353-B2 Compound for resist and radiation-sensitive composition specification MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-08-12 US disclosed
US-8350096-B2 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-01-08 US disclosed
US-8350096-B2 Compound for resist and radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-01-08 US disclosed
US-20130004896-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION SPECIFICATION ECHIGO MASATOSHI (JP) 2013-01-03 US disclosed
US-20130004896-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION SPECIFICATION ECHIGO MASATOSHI (JP) 2013-01-03 US disclosed
US-20110165516-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION ECHIGO MASATOSHI 2011-07-07 US disclosed
US-20110165516-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION ECHIGO MASATOSHI 2011-07-07 US disclosed
US-7919223-B2 Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-04-05 US disclosed
US-7919223-B2 Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-04-05 US disclosed
US-20080113294-A1 Compound for Resist and Radiation-Sensitive Composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-05-15 US disclosed
US-20080113294-A1 Compound for Resist and Radiation-Sensitive Composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-05-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110165516-A1 COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION XRCC6, XRCC5, KISS1R AKR1C3 782/4885AKR1C2 971/4885ALDH1A1 1170/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.