Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.47 |
| ▸ | MAPT | P10636 | 3/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.47 |
| ▸ | HPGD | P15428 | 2/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.46 |
| ▸ | MAOB | P27338 | 2/20 | 0.46 |
| ▸ | MEN1 | O00255 | 2/20 | 0.44 |
| ▸ | MAOA | P21397 | 1/20 | 0.42 |
| ▸ | MMP1 | P03956 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | TP53 | P04637 | 1/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.41 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | CTDSP1 | Q9GZU7 | 1/20 | 0.41 |
| ▸ | RXRA | P19793 | 1/20 | 0.41 |
| ▸ | RXRB | P28702 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12733146 | 0.86 | ALDH1A1 (0.44) | MAPTALDH1A1HPGDKMT2AMEN1 | |
| SCHEMBL2742136 | 0.86 | MEN1 (0.50) | ALDH1A1KMT2AMEN1TDP1LMNA | |
| SCHEMBL14935068 | 0.85 | ALDH1A1 (0.51) | KDM4EMAPTALDH1A1HPGDKMT2A | |
| SCHEMBL12116550 | 0.85 | HPGD (0.46) | MAPTALDH1A1HPGDMAOBMMP1 | |
| SCHEMBL10159813 | 0.85 | PPARG (0.44) | ALDH1A1HPGDKMT2AMEN1SMN1; SMN2 | |
| SCHEMBL12419179 | 0.83 | OPRK1 (0.49) | MAPTALDH1A1KMT2AMAOBMEN1 | |
| SCHEMBL19420321 | 0.83 | ALDH1A1 (0.37) | ALDH1A1KMT2AMEN1SMN1; SMN2L3MBTL1 | |
| SCHEMBL3268541 | 0.83 | ALDH1A1 (0.37) | ALDH1A1KMT2AMEN1SMN1; SMN2L3MBTL1 | |
| SCHEMBL19420320 | 0.83 | PPIB (0.42) | MAPTALDH1A1KMT2AMEN1MAOA | |
| SCHEMBL14867070 | 0.83 | SMN1; SMN2 (0.50) | MAPTALDH1A1KMT2AMEN1SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180039175-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9604921-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-31 | — | — | US | disclosed |
| US-20150268556-A1 | CHEMICALLY-AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-24 | — | — | US | disclosed |
| US-20150198877-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-20110171579-A1 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
| US-7736822-B2 | Resist underlayer coating forming composition for mask blank, mask blank and mask | HOYA CORPORATION (JP) | 2010-06-15 | — | — | US | disclosed |
| US-20100081081-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-7309560-B2 | Composition for forming anti-reflective coating | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2007-12-18 | — | — | US | disclosed |
| US-20070190459-A1 | Resist underlayer coating forming composition for mask blank, mask blank and mask | HOYA CORPORATION (JP) | 2007-08-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | KDM4E 3446/4885MAPT 3178/4885ALDH1A1 3949/4885 |
| US-20160090355-A1 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | ETV6, ETV1, EIF2B3 | KDM4E 591/4885MAPT 4438/4885ALDH1A1 3354/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.