Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.50 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.50 |
| ▸ | ESR1 | P03372 | 4/20 | 0.43 |
| ▸ | ESR2 | Q92731 | 2/20 | 0.43 |
| ▸ | BLM | P54132 | 1/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | CA12 | O43570 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 1/20 | 0.42 |
| ▸ | CA2 | P00918 | 1/20 | 0.42 |
| ▸ | CA7 | P43166 | 1/20 | 0.42 |
| ▸ | CA9 | Q16790 | 1/20 | 0.42 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.42 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.40 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.40 |
| ▸ | KDR | P35968 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12733146 | 0.89 | ALDH1A1 (0.44) | MEN1KMT2ALMNAALDH1A1SLC6A2 | |
| SCHEMBL12116550 | 0.88 | HPGD (0.46) | CA1CA2CA9ALDH1A1CTBP2 | |
| SCHEMBL10159813 | 0.88 | PPARG (0.44) | MEN1KMT2ACA1CA2ALDH1A1 | |
| SCHEMBL19420320 | 0.86 | PPIB (0.42) | MEN1KMT2ABLMLMNACA1 | |
| SCHEMBL12419179 | 0.86 | OPRK1 (0.49) | MEN1KMT2ALMNAMAPK1ALDH1A1 | |
| SCHEMBL17552773 | 0.86 | RIPK1 (0.53) | MEN1KMT2ALMNA | |
| SCHEMBL19420321 | 0.86 | ALDH1A1 (0.37) | MEN1KMT2ACA1CA2ALDH1A1 | |
| SCHEMBL12419178 | 0.86 | KDM4E (0.47) | MEN1KMT2ALMNAALDH1A1TDP1 | |
| SCHEMBL3268541 | 0.86 | ALDH1A1 (0.37) | MEN1KMT2ACA1CA2ALDH1A1 | |
| SCHEMBL14867070 | 0.86 | SMN1; SMN2 (0.50) | MEN1KMT2ALMNACA1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 162 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11754926-B2 | Method of forming resist pattern, resist composition and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230221643-A1 | HARD MASK-FORMING COMPOSITION AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | TOKYO OHKA KOGYO CO LTD (JP) | 2023-07-13 | — | — | US | disclosed |
| US-11693316-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-06 | — | — | US | disclosed |
| US-11650503-B2 | Hard mask-forming composition and method for manufacturing electronic component | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-16 | — | — | US | disclosed |
| US-11644751-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-09 | — | — | US | disclosed |
| US-20230127914-A1 | RESIST PATTERN FORMATION METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090269701-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-7432034-B2 | Negative resist composition | FUJIFILM CORPORATION (JP) | 2008-10-07 | — | — | US | disclosed |
| US-20080241745-A1 | Mixture of alkali soluble polymer, crosslinking agent, acid generator ; radiation with actinic radiation; quaternary ammonium compound | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-7309560-B2 | Composition for forming anti-reflective coating | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2007-12-18 | — | — | US | disclosed |
| US-20070190459-A1 | Resist underlayer coating forming composition for mask blank, mask blank and mask | HOYA CORPORATION (JP) | 2007-08-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | MEN1 1046/4885KMT2A 2140/4885ESR1 840/4885 |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | MEN1 718/4885KMT2A 3509/4885ESR1 94/4885 |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, RAD54L | MEN1 2642/4885KMT2A 2036/4885ESR1 2081/4885 |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | RB1, RBBP5, RRM2B | MEN1 286/4885KMT2A 1263/4885ESR1 753/4885 |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | POLI, POLL, SLC11A2 | MEN1 2828/4885KMT2A 965/4885ESR1 95/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.