SCHEMBL12440972

SCHEMBL12440972

CCc1cccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O)c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
TSHR P16473 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
POLB P06746 1/20 0.38
KDM4E B2RXH2 4/20 0.37
ALDH1A1 P00352 3/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
GAA P10253 1/20 0.37
SOD1 P00441 1/20 0.36
HDAC3 O15379 1/20 0.36
HDAC4 P56524 1/20 0.36
HDAC1 Q13547 1/20 0.36
HDAC7 Q8WUI4 1/20 0.36
HDAC2 Q92769 1/20 0.36
HDAC10 Q969S8 1/20 0.36
HDAC11 Q96DB2 1/20 0.36
HDAC8 Q9BY41 1/20 0.36
HDAC6 Q9UBN7 1/20 0.36
HDAC9 Q9UKV0 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12398373 0.85 CYP1A2 (0.38) MAPK1L3MBTL1TDP1KDM4ESMN1; SMN2
SCHEMBL16015474 0.85 PPARA (0.51)
SCHEMBL2618584 0.82 PPARG (0.43) MAPK1L3MBTL1TDP1ALDH1A1GAA
SCHEMBL8499667 0.81 DRD2 (0.46) MAPK1L3MBTL1TSHRTDP1POLB
SCHEMBL18594501 0.78 CA1 (0.37) MAPK1TSHRPOLBALDH1A1SMN1; SMN2
SCHEMBL3753755 0.78 CA1 (0.42) TSHRTDP1SMN1; SMN2
SCHEMBL16238445 0.78 MAPK1 (0.46) MAPK1L3MBTL1TSHRTDP1POLB
SCHEMBL18572508 0.77 CA1 (0.37) DRD2DRD1DRD4DRD5DRD3
SCHEMBL20866269 0.74 SOD1 (0.46) MAPK1L3MBTL1TSHRTDP1POLB
SCHEMBL3169174 0.73 SOD1 (0.45) MAPK1L3MBTL1TSHRTDP1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1764647-B1 Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same FUJIFILM CORP (JP) 2011-08-17 EP disclosed