⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL645521 | 0.96 | — | — | |
| SCHEMBL648651 | 0.96 | — | — | |
| SCHEMBL1263825 | 0.81 | — | — | |
| SCHEMBL6537236 | 0.80 | — | — | |
| SCHEMBL4295983 | 0.80 | — | — | |
| SCHEMBL13418129 | 0.80 | ALDH1A1 (0.33) | — | |
| SCHEMBL1263411 | 0.78 | ALDH1A1 (0.32) | — | |
| SCHEMBL646822 | 0.77 | — | — | |
| SCHEMBL646825 | 0.77 | — | — | |
| SCHEMBL647009 | 0.75 | ALDH1A1 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1981074-B1 | ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR CORP (JP) | 2011-06-22 | — | — | EP | disclosed |
| US-7893538-B2 | Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device | JSR CORPORATION (JP) | 2011-02-22 | — | — | US | disclosed |
| US-20100007025-A1 | ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2010-01-14 | — | — | US | disclosed |
| US-7556860-B2 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2009-07-07 | — | — | US | disclosed |
| EP-1981074-A1 | ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR Corporation (JP) | 2008-10-15 | — | — | EP | disclosed |
| US-20080246153-A1 | ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-7291567-B2 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-20060216531-A1 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-09-28 | — | — | US | disclosed |
| EP-1679184-A1 | LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-20060024980-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-02-02 | — | — | US | disclosed |