SCHEMBL13027379

SCHEMBL13027379

CO[Si](CCc1c(C)cc(C)cc1C)(OC)OC

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ HRH3 Q9Y5N1 3/20 0.40
▸ CYP11B1 P15538 1/20 0.34
▸ CYP11B2 P19099 1/20 0.34
▸ LMNA P02545 2/20 0.34
▸ MAPT P10636 2/20 0.34
▸ MEN1 O00255 2/20 0.34
▸ KMT2A Q03164 2/20 0.34
▸ HTT P42858 1/20 0.34
▸ NPSR1 Q6W5P4 1/20 0.34
▸ HTR1D P28221 2/20 0.33
▸ HTR1B P28222 1/20 0.33
▸ ACHE P22303 1/20 0.32
▸ KDM4E B2RXH2 1/20 0.30
▸ ALDH1A1 P00352 1/20 0.30
▸ GAA P10253 1/20 0.30
▸ MAPK1 P28482 1/20 0.30
▸ RAPGEF4 Q8WZA2 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027411 0.89 ACHE (0.41) HRH3CYP11B1CYP11B2LMNAMAPT
SCHEMBL15672328 0.86 ALDH1A1 (0.39) ALDH1A1
SCHEMBL13027378 0.82 TAAR1 (0.30) HRH3
SCHEMBL13027473 0.82 ACHE (0.45) MAPTMEN1KMT2ANPSR1ACHE
SCHEMBL13027424 0.81 ACHE (0.36) LMNAMAPTKMT2AACHEALDH1A1
SCHEMBL13027392 0.81 KMT2A (0.34) CYP11B1CYP11B2LMNAMAPTKMT2A
SCHEMBL25916974 0.81 PGK1 (0.33) LMNAMAPTMEN1KMT2AACHE
SCHEMBL15672330 0.80 HRH3 (0.38) HRH3CYP11B1CYP11B2MAPTMEN1
SCHEMBL13027385 0.79 TAAR1 (0.34) LMNAMAPTMEN1KMT2AHTT
SCHEMBL13027393 0.79 ALDH1A1 (0.41) LMNAMAPTACHEKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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