SCHEMBL13027609

SCHEMBL13027609

C#CO[Si](CCc1ccc(OC)cc1)(OC#C)OC#C

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TAAR1 Q96RJ0 1/20 0.47
▸ MAOB P27338 3/20 0.43
▸ CALM1 P0DP23 2/20 0.43
▸ SMN1; SMN2 Q16637 1/20 0.42
▸ PYCR1 P32322 1/20 0.42
▸ SIGMAR1 Q99720 1/20 0.42
▸ AOC3 Q16853 1/20 0.42
▸ IDO1 P14902 1/20 0.41
▸ F2RL1 P55085 1/20 0.41
▸ TUBB4A P04350 1/20 0.41
▸ TUBB P07437 1/20 0.41
▸ TUBA3C P0DPH7 1/20 0.41
▸ TUBA1B P68363 1/20 0.41
▸ TUBA4A P68366 1/20 0.41
▸ TUBB4B P68371 1/20 0.41
▸ TUBB3 Q13509 1/20 0.41
▸ TUBB2A Q13885 1/20 0.41
▸ TUBB8 Q3ZCM7 1/20 0.41
▸ TUBA3E Q6PEY2 1/20 0.41
▸ TUBA1A Q71U36 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027602 0.83 CYP19A1 (0.42) CALM1
SCHEMBL13027511 0.82 CYP1A2 (0.41) TAAR1MAOBSMN1; SMN2PYCR1IDO1
SCHEMBL13027474 0.81 TAAR1 (0.57) TAAR1MAOBCALM1SMN1; SMN2SIGMAR1
SCHEMBL13027612 0.81 TAAR1 (0.53) TAAR1SIGMAR1AOC3IDO1
SCHEMBL13027628 0.79 ATM (0.51) AOC3KDM4ELMNA
SCHEMBL13027538 0.78 TACR1 (0.35) CALM1
SCHEMBL13027613 0.76 ADRA1A (0.54) TAAR1AOC3IDO1
SCHEMBL13027555 0.76 ATM (0.38) TAAR1AOC3KDM4ELMNA
SCHEMBL13027489 0.76 MAPT (0.42) SMN1; SMN2KDM4E
SCHEMBL13027618 0.76 APLNR (0.47) TAAR1KDM4ELMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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