SCHEMBL13296175

SCHEMBL13296175

CCC(C)c1ccc(OC(=O)c2ccc(Br)cc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TP53 P04637 1/20 0.51
▸ ALDH1A1 P00352 1/20 0.50
▸ TSHR P16473 1/20 0.50
▸ THRB P10828 1/20 0.48
▸ PRSS1 P07477 2/20 0.47
▸ ACR P10323 2/20 0.47
▸ ESR1 P03372 1/20 0.45
▸ HIF1A Q16665 1/20 0.45
▸ MAPT P10636 3/20 0.44
▸ KMT2A Q03164 3/20 0.43
▸ MEN1 O00255 2/20 0.43
▸ TDP1 Q9NUW8 1/20 0.43
▸ RAB9A P51151 3/20 0.42
▸ NPC1 O15118 2/20 0.42
▸ HSP90AA1 P07900 1/20 0.42
▸ L3MBTL1 Q9Y468 1/20 0.42
▸ LMNA P02545 1/20 0.41
▸ MAPK1 P28482 1/20 0.41
▸ NPSR1 Q6W5P4 1/20 0.41
▸ RXFP1 Q9HBX9 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13296203 0.88 ALDH1A1 (0.50) TP53ALDH1A1TSHRPRSS1ACR
SCHEMBL13144203 0.87 TSHR (0.51) ALDH1A1TSHRPRSS1ACRESR1
SCHEMBL13144362 0.87 ALDH1A1 (0.55) ALDH1A1TSHRPRSS1ACRESR1
SCHEMBL6721979 0.85 ALDH1A1 (0.56) ALDH1A1TSHRPRSS1ACRESR1
SCHEMBL1789851 0.85 ALDH1A1 (0.53) ALDH1A1TSHRTHRBPRSS1ACR
SCHEMBL13704322 0.84 ALDH1A1 (0.44) TP53ALDH1A1TSHRMAPTKMT2A
SCHEMBL14866980 0.83 MAPT (0.60) ALDH1A1TSHRTHRBPRSS1ACR
SCHEMBL12127187 0.83 L3MBTL1 (0.49) ALDH1A1TSHRPRSS1ACRESR1
SCHEMBL6722062 0.83 ALDH1A1 (0.51) ALDH1A1TSHRPRSS1ACRMAPT
SCHEMBL13144241 0.83 ALDH1A1 (0.51) ALDH1A1TSHRPRSS1ACRMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7736822-B2 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2010-06-15 — — US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 — — US disclosed
US-7309560-B2 Composition for forming anti-reflective coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-12-18 — — US disclosed
US-20070190459-A1 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2007-08-16 — — US disclosed
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