Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 4/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.42 |
| ▸ | MEN1 | O00255 | 5/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 5/20 | 0.38 |
| ▸ | LMNA | P02545 | 3/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | SLC5A7 | Q9GZV3 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | ACHE | P22303 | 5/20 | 0.35 |
| ▸ | APEX1 | P27695 | 3/20 | 0.35 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.35 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.35 |
| ▸ | RAB9A | P51151 | 1/20 | 0.35 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | APAF1 | O14727 | 1/20 | 0.32 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8049934 | 0.97 | — | — | |
| SCHEMBL6847115 | 0.86 | TSHR (0.36) | TSHRALDH1A1MEN1KMT2ALMNA | |
| Water SCHEMBL3306334 | 0.81 | TSHR (0.37) | TSHRALDH1A1TDP1 | |
| Water SCHEMBL3303884 | 0.81 | TSHR (0.37) | TSHRALDH1A1TDP1 | |
| SCHEMBL5029245 | 0.79 | MEN1 (0.47) | TSHRMEN1KMT2ALMNAACHE | |
| SCHEMBL35948 | 0.78 | — | — | |
| Hydrochloric Acid SCHEMBL10718209 | 0.78 | TSHR (0.44) | TSHRALDH1A1LMNATDP1RAD52 | |
| Water SCHEMBL3304691 | 0.77 | TSHR (0.40) | TSHRALDH1A1TDP1NFKB1KDM4E | |
| Water SCHEMBL3312115 | 0.77 | TSHR (0.40) | TSHRALDH1A1TDP1NFKB1KDM4E | |
| Hydrochloric Acid SCHEMBL3513109 | 0.77 | APEX1 (0.50) | TSHRMEN1KMT2ALMNACYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 141 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113430070-A | CoWP-compatible semi-aqueous cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-113430069-A | Low-hydroxylamine water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-113430064-A | Hydroxylamine-free water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2021-09-24 | — | — | CN | claimed |
| CN-104087913-B | Chemical composition used for increasing growth of inert silicon compound on surface of substrate | 韩冰 | 2017-03-22 | — | — | CN | claimed |
| US-8859437-B2 | Solution for etching a thin film transistor and method of manufacturing the same | THE PENN STATE RESEARCH FOUNDATION (US) | 2014-10-14 | — | — | US | claimed |
| US-20140193945-A1 | SOLUTION FOR ETCHING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME | THE PENN STATE RESEARCH FOUNDATION | 2014-07-10 | — | — | US | claimed |
| EP-2122418-B1 | STRIPPER FOR COATING LAYER | AZ ELECTRONIC MATERIALS USA (US) | 2012-08-08 | — | — | EP | claimed |
| US-20120187336-A1 | CONDITIONING COMPOSITIONS FOR SOLAR CELLS | SURFACE CHEMISTRY DISCOVERIES, INC. (US) | 2012-07-26 | — | — | US | claimed |
| US-8026201-B2 | Comprising: a fluoride source, an organic quaternary ammonium base, and a solvent selected from an organic solvent, water, and mixtures thereof; for removing silicon-based anti-reflective coatings/hardmask layers from microelectronics; etch selectivity | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2011-09-27 | — | — | US | claimed |
| EP-2122418-A2 | STRIPPER FOR COATING LAYER | AZ Electronic Materials USA Corp. (US) | 2009-11-25 | — | — | EP | claimed |
| CN-101578556-A | Stripper for coating layer | AZ ELECTRONIC MATERIALS USA (US) | 2009-11-11 | — | — | CN | claimed |
| US-20090120457-A1 | COMPOSITIONS AND METHOD FOR REMOVING COATINGS AND PREPARATION OF SURFACES FOR USE IN METAL FINISHING, AND MANUFACTURING OF ELECTRONIC AND MICROELECTRONIC DEVICES | SURFACE CHEMISTRY DISCOVERIES, INC. (US) | 2009-05-14 | — | — | US | claimed |
| WO-2008081416-A2 | STRIPPER FOR COATING LAYER | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2008-07-10 | — | — | WO | claimed |
| US-20080161217-A1 | Stripper for Coating Layer | MERCK PATENT GMBH (DE) | 2008-07-03 | — | — | US | claimed |
| EP-1027415-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | Kyzen Corporation (US) | 2000-08-16 | — | — | EP | claimed |
| WO-1999016855-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | KYZEN CORPORATION (US) | 1999-04-08 | — | — | WO | claimed |
| US-4339340-A | HYDROXYLAKYL/TRIALKYLAMMONIUM HYDROXIDE | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1982-07-13 | — | — | US | claimed |
| US-4239661-A | HYDROXYALKYL TRIALKYLAMMONIUM HYDROXIDE | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1980-12-16 | — | — | US | claimed |
| CN-113430070-B | CoWP compatible semi-water-based cleaning solution, preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| US-4172005-A | Method of etching a semiconductor substrate | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1979-10-23 | — | — | US | disclosed |