Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL3302970 | 0.86 | DNM1 (0.39) | TSHRTDP1ALDH1A1 | |
| SCHEMBL28230537 | 0.82 | TSHR (0.40) | TSHRTDP1ALDH1A1 | |
| Water SCHEMBL3306334 | 0.81 | TSHR (0.37) | TSHRTDP1ALDH1A1 | |
| Water SCHEMBL1334084 | 0.81 | TSHR (0.42) | TSHRTDP1ALDH1A1 | |
| SCHEMBL8049934 | 0.78 | — | — | |
| SCHEMBL14958464 | 0.78 | TSHR (0.32) | TSHRTDP1ALDH1A1 | |
| Hydrochloric Acid SCHEMBL14957656 | 0.75 | CYP3A4 (0.32) | TSHRTDP1 | |
| SCHEMBL28227522 | 0.75 | — | — | |
| Water SCHEMBL3305359 | 0.75 | TSHR (0.38) | TSHRTDP1ALDH1A1 | |
| SCHEMBL16261136 | 0.73 | LMNA (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8349207-B2 | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device | JSR CORPORATION (JP) | 2013-01-08 | — | — | US | disclosed |
| US-20100099260-A1 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2010-04-22 | — | — | US | disclosed |
| EP-2131389-A1 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE | JSR Corporation (JP) | 2009-12-09 | — | — | EP | disclosed |
| US-20040077512-A1 | Cleaning agent for a semi-conductor substrate | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2004-04-22 | — | — | US | disclosed |
| US-6716803-B2 | HAVING COPPER WIRINGS ON ITS SURFACE, COMPRISING A NONIONIC SURFACTANT, ESPECIALLY A POLYOXYALKYLENE COMPOUNDS CONTAINING AN ACETYLENIC GROUP. | WAKO PURE CHEMCIAL INDUSTRIES, LTD. (JP) | 2004-04-06 | — | — | US | disclosed |
| US-6534458-B1 | This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. control a speed of etching on | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2003-03-18 | — | — | US | disclosed |
| US-20020016272-A1 | Cleaning agent for a semi-conductor substrate | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6310019-B1 | COMPRISING NONIONIC SURFACTANT; FOR CLEANING SURFACE HAVING COPPER WIRINGS; CORROSION RESISTANCE | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2001-10-30 | — | — | US | disclosed |