SCHEMBL13607339

SCHEMBL13607339

CCC(C)(C)C(=O)OC1C2CC3C(=O)OCC1C3C2

nearest known ligand 0.33

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 3/20 0.33
FKBP1A P62942 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18898210 0.88
SCHEMBL13893167 0.81 HMGCR (0.35) HMGCR
SCHEMBL13088271 0.81 HMGCR (0.35) HMGCR
SCHEMBL16810007 0.81 HMGCR (0.35) HMGCR
SCHEMBL47485 0.81 HMGCR (0.35) HMGCR
SCHEMBL10311819 0.81 HMGCR (0.34) HMGCR
SCHEMBL111847 0.79 HMGCR (0.35) HMGCR
SCHEMBL20691823 0.77
SCHEMBL14616205 0.75 ALDH1A1 (0.32)
SCHEMBL47531 0.75 HMGCR (0.35) HMGCRFKBP1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10018913-B2 Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2018-07-10 US disclosed
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 US disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed
US-20170115569-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-08 US disclosed
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-08 US disclosed
US-9411225-B2 Photo acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
US-9411225-B2 Photo acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 US disclosed
US-9366958-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224657-A1 ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224657-A1 ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224659-A1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224659-A1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-20130108960-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-20090274975-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2009-11-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS LIFR, NHERF1, INSR HMGCR 3456/4885FKBP1A 3846/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.