Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC22A2 | O15244 | 1/20 | 0.48 |
| ▸ | SLC47A1 | Q96FL8 | 1/20 | 0.48 |
| ▸ | MAPT | P10636 | 1/20 | 0.46 |
| ▸ | MEN1 | O00255 | 2/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | GRIN2D | O15399 | 1/20 | 0.36 |
| ▸ | GRIN3B | O60391 | 1/20 | 0.36 |
| ▸ | GRIN1 | Q05586 | 1/20 | 0.36 |
| ▸ | GRIN2A | Q12879 | 1/20 | 0.36 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.36 |
| ▸ | GRIN2C | Q14957 | 1/20 | 0.36 |
| ▸ | GRIN3A | Q8TCU5 | 1/20 | 0.36 |
| ▸ | EPHX2 | P34913 | 3/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.35 |
| ▸ | POLB | P06746 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL135697 | 0.87 | SLC22A2 (0.45) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL133167 | 0.81 | SLC22A2 (0.52) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL14696768 | 0.77 | SLC22A2 (0.48) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL658693 | 0.77 | SLC22A2 (0.40) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL660251 | 0.76 | SLC22A2 (0.52) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL28287615 | 0.76 | SLC22A2 (0.41) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL14055077 | 0.76 | SLC22A2 (0.41) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL14695859 | 0.74 | SLC22A2 (0.50) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| SCHEMBL11636157 | 0.74 | SLC22A2 (0.56) | SLC22A2SLC47A1MAPTMEN1KMT2A | |
| Hydrochloric Acid SCHEMBL1677957 | 0.74 | MAPT (0.54) | SLC22A2SLC47A1MAPTMEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2584409-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO LTD (JP) | 2021-04-28 | — | — | EP | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| US-9834696-B2 | Undercoat agent and method of forming pattern of layer containing block copolymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-05 | — | — | US | disclosed |
| US-9821338-B2 | Method of producing structure containing phase-separated structure utilizing a brush composition comprising PS-PMMA | TOKYO OHKA KOGYO., LTD. (JP) | 2017-11-21 | — | — | US | disclosed |
| US-9776208-B2 | Brush composition, and method of producing structure containing phase-separated structure | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9618843-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9494860-B2 | Resist composition, method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-9494866-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| EP-2088466-B1 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO LTD (JP) | 2016-10-26 | — | — | EP | disclosed |
| US-9459535-B2 | Method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20090186300-A1 | RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090181325-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-07-16 | — | — | US | disclosed |
| US-20090162788-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| US-20090162787-A1 | NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| EP-2073060-A1 | Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-24 | — | — | EP | disclosed |
| US-20090130597-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-05-21 | — | — | US | disclosed |
| EP-2060600-A1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-05-20 | — | — | EP | disclosed |
| US-20090104563-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-04-23 | — | — | US | disclosed |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | SLC22A2 1034/4885SLC47A1 2086/4885MAPT 4832/4885 |
| US-20090162787-A1 | NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RER1, ASIC1, ABCC1 | SLC22A2 1466/4885SLC47A1 1236/4885MAPT 4508/4885 |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | RER1, C1R, ABCC1 | SLC22A2 1553/4885SLC47A1 1807/4885MAPT 4527/4885 |
| US-20090104563-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ABCC1, GLRA1 | SLC22A2 1431/4885SLC47A1 1533/4885MAPT 4685/4885 |
| US-20090130597-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, ABCC1 | SLC22A2 940/4885SLC47A1 876/4885MAPT 4434/4885 |
| US-20090162788-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RER1, ASIC1, GLRA1 | SLC22A2 1477/4885SLC47A1 777/4885MAPT 4848/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.