SCHEMBL13609942

SCHEMBL13609942

Cc1cc(C(C)(c2ccc(O)cc2)c2cc(C)c(O)c(C)c2)cc(C)c1O

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 11/20 0.59
ESR2 Q92731 10/20 0.59
CYP3A4 P08684 2/20 0.50
LMNA P02545 1/20 0.50
TYR P14679 1/20 0.50
AR P10275 1/20 0.50
HPGD P15428 1/20 0.50
TSHR P16473 1/20 0.50
SLC6A2 P23975 1/20 0.50
SLC6A4 P31645 1/20 0.50
HTR6 P50406 1/20 0.50
ESRRG P62508 1/20 0.50
SLC6A3 Q01959 1/20 0.50
HSD17B10 Q99714 1/20 0.50
MEN1 O00255 1/20 0.48
KMT2A Q03164 1/20 0.48
ALDH1A1 P00352 1/20 0.43
CA1 P00915 1/20 0.42
CA2 P00918 1/20 0.42
SHBG P04278 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3649814 0.94 ESR1 (0.61) ESR1ESR2CYP3A4LMNATYR
SCHEMBL12006459 0.94 ESR1 (0.53) ESR1ESR2CYP3A4LMNATYR
SCHEMBL2618675 0.93 ESR1 (0.55) ESR1ESR2CYP3A4LMNATYR
SCHEMBL30899192 0.92 ESR2 (0.74) ESR1ESR2CYP3A4LMNATYR
SCHEMBL3642312 0.89 MEN1 (0.53) ESR1ESR2CYP3A4LMNATYR
SCHEMBL12004409 0.86 ESR1 (0.60) ESR1ESR2CYP3A4LMNATYR
SCHEMBL1456440 0.86 ESR1 (0.70) ESR1ESR2CYP3A4LMNATYR
SCHEMBL455094 0.86 CA2 (0.55) ESR1ESR2CYP3A4LMNATYR
SCHEMBL5086131 0.85 ESR1 (0.69) ESR1ESR2CYP3A4LMNATYR
SCHEMBL2314239 0.85 ESR1 (0.52) ESR1ESR2CYP3A4ARHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7615331-B2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7615331-B2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081294-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF CURED RELIEF PATTERN USING THE SAME AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1906246-A2 Photosensitive resin composition, production method of cured relief pattern using the same and semiconductor device FUJIFILM Corporation (JP) 2008-04-02 EP disclosed