SCHEMBL13713552

SCHEMBL13713552

O=C(Oc1c(F)c(F)c(S(=O)(=O)O)c(F)c1F)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TSHR P16473 1/20 0.43
▸ CA12 O43570 2/20 0.42
▸ CA1 P00915 2/20 0.42
▸ CA2 P00918 2/20 0.42
▸ CA9 Q16790 1/20 0.42
▸ LMNA P02545 5/20 0.41
▸ F2 P00734 1/20 0.41
▸ KMT2A Q03164 6/20 0.41
▸ MAPT P10636 6/20 0.41
▸ SMN1; SMN2 Q16637 2/20 0.41
▸ ALDH1A1 P00352 3/20 0.41
▸ PKM P14618 2/20 0.41
▸ TDP1 Q9NUW8 2/20 0.41
▸ CA7 P43166 1/20 0.41
▸ CA13 Q8N1Q1 1/20 0.41
▸ L3MBTL1 Q9Y468 1/20 0.41
▸ SLC6A3 Q01959 1/20 0.41
▸ TMPRSS15 P98073 1/20 0.40
▸ MEN1 O00255 2/20 0.39
▸ PARP10 Q53GL7 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27397638 0.86 KMT2A (0.37) TSHRCA12CA1CA2CA9
SCHEMBL7086238 0.84 TSHR (0.54) TSHRLMNAF2KMT2AMAPT
SCHEMBL10061694 0.81 TSHR (0.50) TSHRLMNAF2KMT2AMAPT
SCHEMBL29671191 0.81 SMN1; SMN2 (0.51) TSHRCA12CA1CA2CA9
SCHEMBL2742176 0.81 TDP1 (0.42) F2KMT2AMAPTSMN1; SMN2ALDH1A1
SCHEMBL24846704 0.80 HPGD (0.49) TSHRCA12CA1CA2CA9
Benzoic Acid SCHEMBL28868829 0.80 TSHR (0.52) TSHRLMNAF2KMT2AMAPT
SCHEMBL26037226 0.78 ACP1 (0.30) KMT2A
SCHEMBL29996962 0.78 TSHR (0.47) TSHRLMNAF2KMT2AMAPT
SCHEMBL9963769 0.78 ALDH1A1 (0.41) TSHRLMNAKMT2AMAPTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 — — US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 — — US disclosed
WO-2023157455-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2023-08-24 — — WO disclosed
WO-2023119910-A1 RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, ACID GENERATOR, AND COMPOUND JSR株式会社 2023-06-29 — — WO disclosed
WO-2023032973-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-03-09 — — WO disclosed
WO-2023276538-A1 RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND JSR株式会社 2023-01-05 — — WO disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 — — US disclosed
US-20160231652-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 — — US disclosed
US-20160231652-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 — — US disclosed
EP-1536285-B1 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORP (JP) 2016-01-06 — — EP disclosed
US-7592126-B2 Positive resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-09-22 — — US disclosed
US-7465528-B2 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-12-16 — — US disclosed
US-7341817-B2 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2008-03-11 — — US disclosed
US-7273690-B2 Positive resist composition for immersion exposure and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2007-09-25 — — US disclosed
US-20070087288-A1 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION 2007-04-19 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 TSHR 2652/4885CA12 2313/4885CA1 471/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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