Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.48 |
| ▸ | HPGD | P15428 | 1/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.46 |
| ▸ | VDR | P11473 | 1/20 | 0.45 |
| ▸ | MEN1 | O00255 | 3/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.43 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 2/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | POLB | P06746 | 1/20 | 0.42 |
| ▸ | NPC1 | O15118 | 1/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13393713 | 0.85 | L3MBTL1 (0.48) | ALDH1A1HPGDKMT2AVDRMEN1 | |
| SCHEMBL14598270 | 0.81 | ALDH1A1 (0.51) | ALDH1A1KMT2AMEN1L3MBTL1TDP1 | |
| SCHEMBL15896085 | 0.81 | KMT2A (0.44) | ALDH1A1HPGDKMT2AMEN1L3MBTL1 | |
| SCHEMBL3674674 | 0.78 | ALDH1A1 (0.49) | ALDH1A1KMT2AVDRMEN1L3MBTL1 | |
| SCHEMBL29439840 | 0.78 | ALDH1A1 (0.49) | ALDH1A1KMT2AVDRMEN1L3MBTL1 | |
| SCHEMBL16142399 | 0.78 | ALDH1A1 (0.50) | ALDH1A1KMT2AMEN1MAPTCYP1A2 | |
| SCHEMBL4515508 | 0.78 | L3MBTL1 (0.47) | ALDH1A1HPGDL3MBTL1TDP1MAPT | |
| SCHEMBL13105868 | 0.78 | ALDH1A1 (0.39) | ALDH1A1HPGDKMT2AMEN1L3MBTL1 | |
| SCHEMBL3678891 | 0.76 | ALDH1A1 (0.50) | ALDH1A1HPGDKMT2AVDRMEN1 | |
| SCHEMBL13479812 | 0.76 | ALDH1A1 (0.45) | ALDH1A1KMT2AMEN1MAPTPOLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7579131-B2 | Positive resist composition and method of forming resist pattern using the same | FUJIFILM CORPORATION (JP) | 2009-08-25 | — | — | US | disclosed |
| US-7579131-B2 | Positive resist composition and method of forming resist pattern using the same | FUJIFILM CORPORATION (JP) | 2009-08-25 | — | — | US | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-7214467-B2 | Photosensitive resin composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214467-B2 | Photosensitive resin composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7202015-B2 | Positive photoresist composition and pattern making method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-04-10 | — | — | US | disclosed |
| US-7202015-B2 | Positive photoresist composition and pattern making method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-04-10 | — | — | US | disclosed |
| US-7198880-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-04-03 | — | — | US | disclosed |
| US-7198880-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-04-03 | — | — | US | disclosed |
| US-7163776-B2 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7163776-B2 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7160666-B2 | Photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-09 | — | — | US | disclosed |
| US-7160666-B2 | Photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-09 | — | — | US | disclosed |
| US-7157206-B2 | Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-7157206-B2 | Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |