Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.30 |
| ▸ | CA2 | P00918 | 2/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1449190 | 0.73 | — | — | |
| SCHEMBL28344073 | 0.67 | — | — | |
| SCHEMBL17701567 | 0.67 | — | — | |
| SCHEMBL17701572 | 0.67 | — | — | |
| SCHEMBL378577 | 0.67 | — | — | |
| SCHEMBL8647505 | 0.67 | — | — | |
| SCHEMBL17691353 | 0.67 | — | — | |
| SCHEMBL17691335 | 0.67 | — | — | |
| SCHEMBL17691340 | 0.65 | MGLL (0.30) | — | |
| SCHEMBL918211 | 0.65 | MGLL (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110573652-B | Novel formulations for depositing silicon doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2022-07-22 | — | — | CN | claimed |
| US-11193206-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2021-12-07 | — | — | US | claimed |
| CN-110573652-A | Novel formulations for the deposition of silicon-doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2019-12-13 | — | — | CN | claimed |
| US-20180265967-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | claimed |
| WO-2018170125-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| CN-110573652-B | Novel formulations for depositing silicon doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2022-07-22 | — | — | CN | disclosed |
| US-11193206-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2021-12-07 | — | — | US | disclosed |
| CN-110573652-A | Novel formulations for the deposition of silicon-doped hafnium oxide as ferroelectric material | 弗萨姆材料美国有限责任公司 | 2019-12-13 | — | — | CN | disclosed |
| WO-2018170125-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | disclosed |
| US-20180265967-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | disclosed |
| US-8399695-B2 | Organometallic precursor compounds | PRAXAIR TECHNOLOGY, INC. (US) | 2013-03-19 | — | — | US | disclosed |
| US-8399695-B2 | Organometallic precursor compounds | PRAXAIR TECHNOLOGY, INC. (US) | 2013-03-19 | — | — | US | disclosed |
| US-20110293852-A1 | ORGANOMETALLIC PRECURSOR COMPOUNDS | PRAXAIR TECHNOLOGY, INC. | 2011-12-01 | — | — | US | disclosed |
| US-7332618-B2 | Organometallic precursor compounds | PRAXAIR TECHNOLOGY, INC. (US) | 2008-02-19 | — | — | US | disclosed |
| US-7332618-B2 | Organometallic precursor compounds | PRAXAIR TECHNOLOGY, INC. (US) | 2008-02-19 | — | — | US | disclosed |
| WO-2008002415-A2 | PRECURSORS FOR DEPOSITING SILICON CONTAINING FILMS AND PROCESSES THEREOF | PRAXAIR TECHNOLOGY, INC. (US) | 2008-01-03 | — | — | WO | disclosed |
| US-20070299274-A1 | Organometallic compounds | PRAXAIR TECHNOLOGY, INC. | 2007-12-27 | — | — | US | disclosed |
| EP-1805195-A2 | ORGANOMETALLIC PRECURSOR COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2007-07-11 | — | — | EP | disclosed |
| WO-2006036538-A2 | ORGANOMETALLIC PRECURSOR COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2006-04-06 | — | — | WO | disclosed |
| US-20060068102-A1 | Organometallic precursor compounds | PRAXAIR TECHNOLOGY, INC. | 2006-03-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110293852-A1 | ORGANOMETALLIC PRECURSOR COMPOUNDS | MSMO1, NNMT, DNMT1 | CA1 2703/4885CA2 3829/4885POLB 757/4885 |
| US-20070299274-A1 | Organometallic compounds | NR1H3, NR1H2, NR1I3 | CA1 2221/4885CA2 2897/4885POLB 3889/4885 |
| US-20060068102-A1 | Organometallic precursor compounds | MSMO1, NNMT, DNMT1 | CA1 2703/4885CA2 3829/4885POLB 757/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.