Known targets — ChEMBL curated mechanism
ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 known ✓ | P03372 | 1/20 | 0.48 |
| ▸ | CES2 | O00748 | 2/20 | 0.68 |
| ▸ | MEN1 | O00255 | 2/20 | 0.60 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.60 |
| ▸ | THRB | P10828 | 1/20 | 0.60 |
| ▸ | HTT | P42858 | 1/20 | 0.60 |
| ▸ | MAPT | P10636 | 1/20 | 0.60 |
| ▸ | NAAA | Q02083 | 1/20 | 0.52 |
| ▸ | TSHR | P16473 | 5/20 | 0.52 |
| ▸ | PLA2G2C | Q5R387 | 2/20 | 0.50 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.48 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.48 |
| ▸ | PPARG | P37231 | 5/20 | 0.48 |
| ▸ | PPARD | Q03181 | 5/20 | 0.48 |
| ▸ | PPARA | Q07869 | 5/20 | 0.48 |
| ▸ | HDAC11 | Q96DB2 | 4/20 | 0.48 |
| ▸ | GPR84 | Q9NQS5 | 3/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.48 |
| ▸ | TLR2 | O60603 | 2/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetic Acid SCHEMBL4930252 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL353029 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL2400937 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL3426392 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL3139068 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL2863329 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL537713 | 1.00 | CES2 (0.68) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL9550103 | 0.98 | CES2 (0.65) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL3264543 | 0.97 | CES2 (0.64) | CES2MEN1KMT2ATHRBHTT | |
| Acetic Acid SCHEMBL28328015 | 0.95 | CES2 (0.61) | CES2MEN1KMT2ATHRBHTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107931891-B | Solder paste soldering flux | 潮州三环（集团）股份有限公司 | 2020-08-25 | — | — | CN | claimed |
| CN-107931891-B | Solder paste soldering flux | 潮州三环（集团）股份有限公司 | 2020-08-25 | — | — | CN | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9465298-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160103395-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-04-14 | — | — | US | disclosed |
| US-9291904-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9250530-B2 | — | — | 2016-02-02 | — | — | US | disclosed |
| EP-2637062-B1 | Pattern forming method | FUJIFILM CORP (JP) | 2015-08-19 | — | — | EP | disclosed |
| US-20150079522-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| US-8951718-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2015-02-10 | — | — | US | disclosed |
| EP-2413194-A2 | Pattern forming method | Fujifilm Corporation (JP) | 2012-02-01 | — | — | EP | disclosed |
| EP-2413195-A2 | Pattern forming method | Fujifilm Corporation (JP) | 2012-02-01 | — | — | EP | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| EP-1939691-A2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM Corporation (JP) | 2008-07-02 | — | — | EP | disclosed |
| EP-0853116-B1 | Detergent composition for removing resinous stains | KAO CORP (JP) | 2002-08-14 | — | — | EP | disclosed |
| US-5954891-A | ANTISOILANTS OF NONIONIC DETERGENTS ADHERED USING THE DETERGENT COMPOSITION AS DEFINED IN CLAIM 1 OR 2; | KAO CORPORATION (JP) | 1999-09-21 | — | — | US | disclosed |
| US-5834603-A | Polymerization initiator composition | NIPPOH CHEMICALS CO., LTD. (JP) | 1998-11-10 | — | — | US | disclosed |
| EP-0853116-A1 | Detergent composition for removing resinous stains | KAO CORPORATION (JP) | 1998-07-15 | — | — | EP | disclosed |