SCHEMBL13898677

SCHEMBL13898677

CCC(C)(C)c1ccc(C)cc1C(=O)O

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CSNK2A1 P68400 1/20 0.50
MEN1 O00255 3/20 0.40
KMT2A Q03164 3/20 0.40
NOTUM Q6P988 2/20 0.39
ALDH1A1 P00352 1/20 0.39
GFER P55789 1/20 0.39
MRGPRX4 Q96LA9 1/20 0.38
METAP2 P50579 1/20 0.38
MCL1 Q07820 1/20 0.38
CA12 O43570 1/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
CA4 P22748 1/20 0.37
CA6 P23280 1/20 0.37
MAOB P27338 1/20 0.37
CA5A P35218 1/20 0.37
CA7 P43166 1/20 0.37
CA9 Q16790 1/20 0.37
CA14 Q9ULX7 1/20 0.37
CA5B Q9Y2D0 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15457984 0.83 MAPK1 (0.47) MEN1KMT2AALDH1A1CYP2C9
SCHEMBL4238024 0.82 CSNK2A1 (0.57) CSNK2A1MEN1KMT2ANOTUMALDH1A1
SCHEMBL25584211 0.81 ALDH1A1 (0.49) MEN1KMT2AALDH1A1GFERMCL1
SCHEMBL9250721 0.78 ALDH1A1 (0.41) CSNK2A1ALDH1A1METAP2MCL1CA2
SCHEMBL9181752 0.77 HPGD (0.37) CSNK2A1MEN1KMT2AALDH1A1CYP2C9
SCHEMBL1464091 0.77 CSNK2A1 (0.55) CSNK2A1MEN1KMT2ANOTUMALDH1A1
SCHEMBL3307441 0.77 ALDH1A1 (0.48) ALDH1A1CA12CA1CA2CA4
SCHEMBL27782215 0.76 NR4A3 (0.43) ALDH1A1CA12CA9KDM4ECYP2C9
SCHEMBL547727 0.75 CSNK2A1 (0.53) CSNK2A1MEN1KMT2ANOTUMALDH1A1
Hydrochloric Acid SCHEMBL30498667 0.75 CSNK2A1 (0.53) CSNK2A1MEN1KMT2ANOTUMALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed