Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPK1 | P28482 | 1/20 | 0.65 |
| ▸ | ALDH1A1 | P00352 | 10/20 | 0.62 |
| ▸ | PKM | P14618 | 2/20 | 0.62 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.62 |
| ▸ | LMNA | P02545 | 1/20 | 0.62 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.62 |
| ▸ | TSHR | P16473 | 1/20 | 0.56 |
| ▸ | TBXA2R | P21731 | 2/20 | 0.51 |
| ▸ | POLB | P06746 | 1/20 | 0.51 |
| ▸ | HTT | P42858 | 1/20 | 0.51 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17077606 | 0.90 | MAPK1 (0.59) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| SCHEMBL18573521 | 0.88 | MAPK1 (0.55) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| Hydrochloric Acid SCHEMBL18553814 | 0.87 | MAPK1 (0.53) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| SCHEMBL14980269 | 0.86 | ALDH1A1 (0.60) | ALDH1A1PKMLMNAHTTNPSR1 | |
| SCHEMBL14150232 | 0.85 | ALDH1A1 (0.58) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| SCHEMBL16015204 | 0.83 | ALDH1A1 (0.65) | ALDH1A1LMNASMN1; SMN2POLB | |
| SCHEMBL10312376 | 0.82 | ALDH1A1 (0.54) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| SCHEMBL10312338 | 0.82 | ALDH1A1 (0.68) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| SCHEMBL18237754 | 0.81 | ALDH1A1 (0.62) | MAPK1ALDH1A1PKMKDM4ELMNA | |
| SCHEMBL3103504 | 0.80 | ALDH1A1 (0.57) | MAPK1ALDH1A1KDM4EPOLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12248251-B2 | Silicon-containing resist underlayer film-forming composition including organic group having ammonium group | NISSAN CHEMICAL CORPORATION (JP) | 2025-03-11 | — | — | US | disclosed |
| US-11966164-B2 | Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group | NISSAN CHEMICAL CORPORATION (JP) | 2024-04-23 | — | — | US | disclosed |
| US-11815815-B2 | Composition for forming silicon-containing resist underlayer film removable by wet process | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-11-14 | — | — | US | disclosed |
| US-20220373888-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP | NISSAN CHEMICAL CORPORATION (JP) | 2022-11-24 | — | — | US | disclosed |
| US-20210181635-A1 | SEMICONDUCTOR DEVICE PRODUCTION METHOD EMPLOYING SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP | NISSAN CHEMICAL CORPORATION (JP) | 2021-06-17 | — | — | US | disclosed |
| CN-112947000-A | Composition for forming silicon-containing EUV resist underlayer film containing sulfonic acid/salt | 日产化学工业株式会社 | 2021-06-11 | — | — | CN | disclosed |
| CN-107077072-B | Composition for forming resist underlayer film containing silicon and capable of wet removal | 日产化学工业株式会社 | 2021-05-25 | — | — | CN | disclosed |
| US-20210116813-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-04-22 | — | — | US | disclosed |
| EP-3786710-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-03 | — | — | EP | disclosed |
| CN-112005168-A | Resist underlayer film forming composition, underlayer film for lithography, and pattern forming method | 三菱瓦斯化学株式会社 | 2020-11-27 | — | — | CN | disclosed |
| US-20150159045-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFONE STRUCTURE AND AMINE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-06-11 | — | — | US | disclosed |
| EP-2881794-A1 | COMPOSITION FOR FORMING UNDERLAYER FILM FOR SILICON-CONTAINING EUV RESIST AND CONTAINING ONIUM SULFONATE | Nissan Chemical Industries, Ltd. (JP) | 2015-06-10 | — | — | EP | disclosed |
| US-9023588-B2 | Resist underlayer film forming composition containing silicon having nitrogen-containing ring | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-05-05 | — | — | US | disclosed |
| US-20140170855-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-06-19 | — | — | US | disclosed |
| EP-2735904-A1 | THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON | Nissan Chemical Industries, Ltd. (JP) | 2014-05-28 | — | — | EP | disclosed |
| US-20140120730-A1 | THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-05-01 | — | — | US | disclosed |
| EP-2669737-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILMS, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP | Nissan Chemical Industries, Ltd. (JP) | 2013-12-04 | — | — | EP | disclosed |
| US-20130302991-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-11-14 | — | — | US | disclosed |
| EP-2538276-A1 | COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | Nissan Chemical Industries, Ltd. (JP) | 2012-12-26 | — | — | EP | disclosed |
| US-20120315765-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20150159045-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFONE STRUCTURE AND AMINE STRUCTURE | SETDB1, SMC1A, KDM1A | MAPK1 1888/4885ALDH1A1 480/4885PKM 1553/4885 |
| US-20120315765-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | SRSF1, SRSF7, SRRM2 | MAPK1 4354/4885ALDH1A1 2272/4885PKM 2590/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.