SCHEMBL14226972

SCHEMBL14226972

CCOc1ccc(CCC[Si](OCC)(OCC)OCC)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NQO1 P15559 1/20 0.48
MAPT P10636 3/20 0.47
RAB9A P51151 2/20 0.47
L3MBTL1 Q9Y468 1/20 0.47
SIGMAR1 Q99720 1/20 0.43
ACACB O00763 2/20 0.42
LMNA P02545 3/20 0.42
GAA P10253 1/20 0.42
SMN1; SMN2 Q16637 3/20 0.41
TSHR P16473 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
KMT2A Q03164 2/20 0.41
TAS1R3 Q7RTX0 1/20 0.40
TAS1R1 Q7RTX1 1/20 0.40
TAS1R2 Q8TE23 1/20 0.40
HPGD P15428 1/20 0.40
MEN1 O00255 1/20 0.40
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
NPC1 O15118 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17442492 0.89 ALDH1A1 (0.36) LMNASMN1; SMN2HPGDKDM4EALDH1A1
SCHEMBL14226998 0.87 MAPT (0.37) NQO1MAPTRAB9AL3MBTL1SIGMAR1
SCHEMBL14226969 0.86 CALM1 (0.51) KMT2A
SCHEMBL14227000 0.85 ALDH1A1 (0.40) MAPTRAB9AL3MBTL1SMN1; SMN2TSHR
SCHEMBL25293615 0.83 ALDH1A1 (0.39) MAPTRAB9AL3MBTL1LMNAGAA
SCHEMBL14226975 0.82 PPARA (0.40) MAPTRAB9AL3MBTL1ACACB
SCHEMBL4248652 0.81 NQO1 (0.67) NQO1MAPTRAB9AL3MBTL1SIGMAR1
SCHEMBL14226995 0.81 THRB (0.39) MAPTRAB9AL3MBTL1SMN1; SMN2TSHR
SCHEMBL17249750 0.81 THRB (0.36) MAPTLMNASMN1; SMN2KMT2AHPGD
SCHEMBL6930578 0.81 THRB (0.46) ACACBSMN1; SMN2KMT2AMEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240069441-A1 COMPOSITION FOR RESIST UNDERLYING FILM FORMATION NISSAN CHEMICAL CORPORATION (JP) 2024-02-29 US disclosed
US-20230176481-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-06-08 US disclosed
US-20230168582-A1 COMPOSITION FOR FORMING RESIST UNDERLYING FILM NISSAN CHEMICAL CORPORATION (JP) 2023-06-01 US disclosed
US-20230152700-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-05-18 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
US-20170322491-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING HALOGEN-CONTAINING CARBOXYLIC ACID AMIDE GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-11-09 US disclosed
US-20170168397-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING HALOGENATED SULFONYLALKYL GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-06-15 US disclosed
US-20170153549-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING ORGANIC GROUP HAVING ALIPHATIC POLYCYCLIC STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-06-01 US disclosed
US-20170146906-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING PHENYL GROUP-CONTAINING CHROMOPHORE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-05-25 US disclosed
US-9290623-B2 Composition for forming silicon-containing resist underlayer film having cyclic diester group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-03-22 US disclosed
US-20150322212-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-12 US disclosed
US-20150316849-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-05 US disclosed
US-9093279-B2 Thin film forming composition for lithography containing titanium and silicon NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-07-28 US disclosed
US-9023588-B2 Resist underlayer film forming composition containing silicon having nitrogen-containing ring NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-05-05 US disclosed
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-12-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150322212-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP ASH2L, SRRM2, CCNT1 NQO1 4884/4885MAPT 4233/4885RAB9A 2025/4885
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING SRSF1, SRSF7, SRRM2 NQO1 4791/4885MAPT 4750/4885RAB9A 1853/4885
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION RER1, RAD1, RAD51 NQO1 4148/4885MAPT 3163/4885RAB9A 308/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 NQO1 1262/4885MAPT 3609/4885RAB9A 1342/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.