SCHEMBL14227014

SCHEMBL14227014

COC(C)Oc1ccc(S(=O)(=O)c2ccc(OC(C)OC)cc2)cc1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PKM P14618 4/20 0.59
GAA P10253 2/20 0.50
POLB P06746 2/20 0.47
MAPT P10636 1/20 0.47
ELANE P08246 2/20 0.43
HTT P42858 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
RAPGEF4 Q8WZA2 1/20 0.41
ALDH1A1 P00352 2/20 0.40
HSD11B1 P28845 1/20 0.40
TSHR P16473 1/20 0.39
MAPK1 P28482 1/20 0.39
CA2 P00918 2/20 0.39
LOX P28300 1/20 0.39
FFAR4 Q5NUL3 1/20 0.39
TAS1R3 Q7RTX0 1/20 0.39
TAS1R1 Q7RTX1 1/20 0.39
TAS1R2 Q8TE23 1/20 0.39
LMNA P02545 1/20 0.39
KMT2A Q03164 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14227005 0.91 PKM (0.66) PKMGAAPOLBMAPTELANE
SCHEMBL23208276 0.84 LMNA (0.43) PKMGAAPOLBMAPTSMN1; SMN2
SCHEMBL930312 0.83 PKM (0.58) PKMGAAPOLBMAPTELANE
SCHEMBL1792957 0.82 PKM (0.65) PKMGAAPOLBMAPTELANE
SCHEMBL915315 0.82 MMP2 (0.44) PKMGAAPOLBMAPTALDH1A1
SCHEMBL20496688 0.81 PKM (0.47) PKMGAAPOLBMAPTELANE
SCHEMBL482627 0.81 PKM (0.47) PKMGAAPOLBMAPTELANE
SCHEMBL9054589 0.80 PKM (0.73) PKMGAAHTTRAPGEF4HSD11B1
SCHEMBL4131881 0.80 PKM (0.46) PKMGAAPOLBMAPTELANE
SCHEMBL441986 0.79 PKM (0.54) PKMGAAPOLBMAPTELANE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240069441-A1 COMPOSITION FOR RESIST UNDERLYING FILM FORMATION NISSAN CHEMICAL CORPORATION (JP) 2024-02-29 US disclosed
US-20240069441-A1 COMPOSITION FOR RESIST UNDERLYING FILM FORMATION NISSAN CHEMICAL CORPORATION (JP) 2024-02-29 US disclosed
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
US-20230176481-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-06-08 US disclosed
US-20230176481-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-06-08 US disclosed
US-20230168582-A1 COMPOSITION FOR FORMING RESIST UNDERLYING FILM NISSAN CHEMICAL CORPORATION (JP) 2023-06-01 US disclosed
US-20230168582-A1 COMPOSITION FOR FORMING RESIST UNDERLYING FILM NISSAN CHEMICAL CORPORATION (JP) 2023-06-01 US disclosed
US-20230152699-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-05-18 US disclosed
US-20230152699-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2023-05-18 US disclosed
US-9023588-B2 Resist underlayer film forming composition containing silicon having nitrogen-containing ring NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-05-05 US disclosed
US-20140377957-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-12-25 US disclosed
US-20140377957-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-12-25 US disclosed
US-20140170855-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
US-20140170855-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
US-20130183830-A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-18 US disclosed
US-20130183830-A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-18 US disclosed
WO-2013022099-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE 日産化学工業株式会社 (JP) 2013-02-14 WO disclosed
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-12-13 US disclosed
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-12-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING SRSF1, SRSF7, SRRM2 PKM 2590/4885GAA 3015/4885POLB 1809/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.