SCHEMBL1437007

SCHEMBL1437007

C=C(C)C(=O)Oc1ccc(OC(C)(C)C)cc1

nearest known ligand 0.56

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ELANE P08246 8/20 0.56
KMT2A Q03164 3/20 0.51
ATM Q13315 1/20 0.51
ACACB O00763 2/20 0.40
LMNA P02545 1/20 0.38
MAPT P10636 3/20 0.38
MEN1 O00255 1/20 0.37
CYP1A2 P05177 1/20 0.37
CYP3A4 P08684 1/20 0.37
CYP2D6 P10635 1/20 0.37
CYP2C19 P33261 1/20 0.37
PPARA Q07869 1/20 0.37
POLB P06746 2/20 0.36
APEX1 P27695 1/20 0.36
HTT P42858 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
ALDH1A1 P00352 1/20 0.35
RAB9A P51151 1/20 0.35
PKM P14618 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL56436 0.86 ELANE (0.69) ELANEKMT2AATMLMNAMAPT
SCHEMBL22566523 0.84 ELANE (0.51) ELANEKMT2AATMLMNAMAPT
SCHEMBL18372585 0.83 ELANE (0.48) ELANEKMT2AATMACACBMAPT
SCHEMBL20972860 0.83 ELANE (0.50) ELANEKMT2AATMLMNAMAPT
SCHEMBL9999377 0.83 ELANE (0.46) ELANEKMT2AATMLMNAMEN1
SCHEMBL9999348 0.83 ELANE (0.50) ELANEKMT2AATMLMNAMAPT
SCHEMBL22201013 0.83 ELANE (0.50) ELANEKMT2AATMLMNAMAPT
SCHEMBL9707101 0.82 ELANE (0.62) ELANEKMT2AATMLMNAMAPT
SCHEMBL20869287 0.82 ELANE (0.56) ELANEKMT2AATMLMNAMAPT
SCHEMBL33915 0.81 ELANE (0.56) ELANEKMT2AATMLMNAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-14 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20170029547-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-02 US disclosed
US-9063413-B2 Resist composition, patterning process, monomer, and copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-23 US disclosed
US-9052590-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-9052590-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-9052590-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120156618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
US-20120156618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
US-20120156618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
WO-2011025070-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-03-03 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 ELANE 2527/4885KMT2A 558/4885ATM 1111/4885
US-20230400767-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND RER1, RAD51, RFT1 ELANE 2113/4885KMT2A 687/4885ATM 457/4885
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS PARG, PCNA, POLH ELANE 1171/4885KMT2A 873/4885ATM 4312/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.