⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2102921 | 0.77 | — | — | |
| SCHEMBL21353784 | 0.77 | MGLL (0.33) | — | |
| SCHEMBL2103917 | 0.77 | — | — | |
| SCHEMBL4966302 | 0.77 | — | — | |
| SCHEMBL467755 | 0.74 | — | — | |
| SCHEMBL2102625 | 0.74 | — | — | |
| SCHEMBL2103825 | 0.74 | ALDH1A1 (0.33) | — | |
| SCHEMBL2100421 | 0.72 | — | — | |
| SCHEMBL21047503 | 0.72 | — | — | |
| SCHEMBL1100918 | 0.72 | MGLL (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7972663-B2 | Method and apparatus for forming a high quality low temperature silicon nitride layer | APPLIED MATERIALS, INC. (US) | 2011-07-05 | — | — | US | claimed |
| US-20050255714-A1 | Method for silicon nitride chemical vapor deposition | APPLIED MATERIALS, INC. | 2005-11-17 | — | — | US | claimed |
| US-12218138-B2 | Air gap formation between gate spacer and epitaxy structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-02-04 | — | — | US | disclosed |
| US-20240088155-A1 | AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-03-14 | — | — | US | disclosed |
| US-11855097-B2 | Air gap formation between gate spacer and epitaxy structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| US-20220384442-A1 | AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-01 | — | — | US | disclosed |
| US-11456295-B2 | Air gap formation between gate spacer and epitaxy structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-27 | — | — | US | disclosed |
| US-8927400-B2 | Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers | APPLIED MATERIALS, INC. (US) | 2015-01-06 | — | — | US | disclosed |
| US-20140248759-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-8387557-B2 | Method for forming silicon-containing materials during a photoexcitation deposition process | APPLIED MATERIALS (US) | 2013-03-05 | — | — | US | disclosed |
| US-8043907-B2 | Atomic layer deposition processes for non-volatile memory devices | APPLIED MATERIALS, INC. (US) | 2011-10-25 | — | — | US | disclosed |
| US-7601652-B2 | Method for treating substrates and films with photoexcitation | APPLIED MATERIALS, INC. (US) | 2009-10-13 | — | — | US | disclosed |
| US-20090242957-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-10-01 | — | — | US | disclosed |
| US-20090090952-A1 | PLASMA SURFACE TREATMENT FOR SI AND METAL NANOCRYSTAL NUCLEATION | APPLIED MATERIALS, INC. | 2009-04-09 | — | — | US | disclosed |
| US-20090020802-A1 | INTEGRATED SCHEME FOR FORMING INTER-POLY DIELECTRICS FOR NON-VOLATILE MEMORY DEVICES | APPLIED MATERIALS, INC. | 2009-01-22 | — | — | US | disclosed |
| US-20080153271-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. | 2008-06-26 | — | — | US | disclosed |
| US-20060286774-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS. INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286775-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286820-A1 | Method for treating substrates and films with photoexcitation | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |
| US-20060286776-A1 | METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2006-12-21 | — | — | US | disclosed |