SCHEMBL4966302

SCHEMBL4966302

CCN(CC)[Si](Cl)(Cl)N(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103111 0.83
SCHEMBL2103917 0.77
SCHEMBL1448489 0.77
SCHEMBL21353784 0.77 MGLL (0.33)
SCHEMBL2102921 0.77
SCHEMBL467755 0.74
SCHEMBL2103825 0.74 ALDH1A1 (0.33)
SCHEMBL2102625 0.74
SCHEMBL2103140 0.72
SCHEMBL21047503 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20130052349-A1 ORGANOMETALLIC COMPOUNDS PRAXAIR TECHNOLOGY, INC. 2013-02-28 US claimed
WO-2008002415-A2 PRECURSORS FOR DEPOSITING SILICON CONTAINING FILMS AND PROCESSES THEREOF PRAXAIR TECHNOLOGY, INC. (US) 2008-01-03 WO claimed
US-20070299274-A1 Organometallic compounds PRAXAIR TECHNOLOGY, INC. 2007-12-27 US claimed
CN-107312028-B Halogenated organoaminosilane precursors and methods of depositing thin films comprising the same 弗萨姆材料美国有限责任公司 2023-04-14 CN disclosed
EP-2574611-B1 Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same AIR PROD & CHEM (US) 2016-03-23 EP disclosed
US-8993072-B2 Halogenated organoaminosilane precursors and methods for depositing films comprising same AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-03-31 US disclosed
EP-2574611-A1 Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-04-03 EP disclosed
US-20130078392-A1 HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-03-28 US disclosed
US-20130052349-A1 ORGANOMETALLIC COMPOUNDS PRAXAIR TECHNOLOGY, INC. 2013-02-28 US disclosed
US-20130047890-A1 ORGANOMETALLIC COMPOUNDS PRAXAIR TECHNOLOGY, INC. 2013-02-28 US disclosed
US-8318966-B2 Organometallic compounds PRAXAIR TECHNOLOGY, INC. (US) 2012-11-27 US disclosed
US-6869638-B2 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same ADVANCED TEHNOLOGY MATERIALS, INC. (US) 2005-03-22 US disclosed
EP-0864573-B1 Silacyclopentadiene derivatives CHISSO CORP (JP) 2004-06-23 EP disclosed
EP-1373278-A1 METALLOAMIDE AND AMINOSILANE PRECURSORS FOR CVD FORMATION OF DIELECTRIC THIN FILMS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2004-01-02 EP disclosed
WO-2003084969-A1 SILICON SOURCE REAGENT COMPOSITIONS, AND METHOD OF MAKING AND USING SAME FOR MICROELECTRONIC DEVICE STRUCTURE ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2003-10-16 WO disclosed
US-20020187644-A1 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same MORGAN STANLEY SENIOR FUNDING, INC. 2002-12-12 US disclosed
US-20020180028-A1 Silicon source reagent compositions, and method of making and using same for microelectronic device structure ADVANCED TECHNOLOGY MATERIALS, INC. 2002-12-05 US disclosed
WO-2002079211-A1 METALLOAMIDE AND AMINOSILANE PRECURSORS FOR CVD FORMATION OF DIELECTRIC THIN FILMS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2002-10-10 WO disclosed
US-6005128-A Silacyclopentadiene derivative CHISSO CORPORATION (JP) 1999-12-21 US disclosed
EP-0864573-A2 Silacyclopentadiene derivative CHISSO CORPORATION (JP) 1998-09-16 EP disclosed