SCHEMBL17812681

SCHEMBL17812681

CCC(C)(C)C(=O)Oc1ccc(C(C)(O)C2CC3CCC2C3)cc1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
▸ ELANE P08246 6/20 0.39
▸ L3MBTL1 Q9Y468 2/20 0.39
▸ CYP19A1 P11511 1/20 0.34
▸ NPC1 O15118 1/20 0.34
▸ ALDH1A1 P00352 1/20 0.34
▸ MAPT P10636 1/20 0.34
▸ HPGD P15428 1/20 0.34
▸ MAPK1 P28482 1/20 0.34
▸ RAB9A P51151 1/20 0.34
▸ GFER P55789 1/20 0.34
▸ EPHX2 P34913 1/20 0.34
▸ NPY2R P49146 1/20 0.33
▸ PANK3 Q9H999 1/20 0.33
▸ HRH3 Q9Y5N1 4/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17812642 0.85 NAAA (0.33) L3MBTL1CYP19A1NPC1ALDH1A1MAPT
SCHEMBL18911195 0.81 ALDH1A1 (0.46) L3MBTL1CYP19A1ALDH1A1MAPTHPGD
SCHEMBL14665303 0.80 L3MBTL1 (0.43) ELANEL3MBTL1NPC1ALDH1A1MAPT
SCHEMBL17812759 0.80 ELANE (0.43) ELANEALDH1A1NPY2RHRH3
SCHEMBL17812750 0.79 CHRM2 (0.42) ELANENPC1ALDH1A1MAPTRAB9A
SCHEMBL18905382 0.77 CYP19A1 (0.37) L3MBTL1CYP19A1ALDH1A1MAPTHPGD
SCHEMBL14747377 0.75 ELANE (0.51) ELANEL3MBTL1MAPTHRH3
SCHEMBL15497373 0.74 MAPT (0.50) ELANEL3MBTL1ALDH1A1MAPTRAB9A
SCHEMBL27428780 0.74 ELANE (0.50) ELANEL3MBTL1MAPTHRH3
SCHEMBL15179672 0.74 ELANE (0.50) ELANEL3MBTL1NPC1MAPTRAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 — — US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 — — US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 — — US disclosed
US-20160161850-A1 SHRINK MATERIAL AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-09 — — US disclosed
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