Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.48 |
| ▸ | HTR7 | P34969 | 1/20 | 0.39 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | NSD2 | O96028 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | FFAR1 | O14842 | 6/20 | 0.36 |
| ▸ | FFAR4 | Q5NUL3 | 4/20 | 0.36 |
| ▸ | CDC7 | O00311 | 1/20 | 0.36 |
| ▸ | ALK | Q9UM73 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 2/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.36 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.35 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.35 |
| ▸ | BACE1 | P56817 | 1/20 | 0.35 |
| ▸ | MMP12 | P39900 | 1/20 | 0.35 |
| ▸ | MMP13 | P45452 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15368855 | 0.86 | TDP1 (0.56) | TDP1CA2KDM4ENSD2MAPT | |
| SCHEMBL15580594 | 0.83 | TDP1 (0.40) | TDP1CA2MAPTFFAR1FFAR4 | |
| SCHEMBL27880556 | 0.82 | MAPK1 (0.46) | TDP1HTR7KDM4ENSD2MAPT | |
| SCHEMBL15184103 | 0.81 | TDP1 (0.43) | TDP1CA2FFAR1FFAR4CDC7 | |
| SCHEMBL15368839 | 0.81 | HTR7 (0.44) | HTR7KDM4ENSD2MAPTMAPK1 | |
| SCHEMBL5992941 | 0.80 | TDP1 (0.62) | TDP1CA2KDM4EMAPTFFAR1 | |
| SCHEMBL6550775 | 0.80 | MAPT (0.52) | TDP1HTR7KDM4ENSD2MAPT | |
| SCHEMBL11091226 | 0.79 | NR1H2 (0.48) | HTR7KDM4ENSD2MAPTMAPK1 | |
| SCHEMBL15418802 | 0.78 | MAPK1 (0.43) | TDP1HTR7KDM4ENSD2MAPT | |
| Hydrogen Sulfide SCHEMBL27169707 | 0.78 | MAPT (0.50) | TDP1HTR7KDM4ENSD2MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9551933-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9488911-B2 | Photosensitive composition, photocurable composition, chemical amplification resist composition, resist film, pattern forming method, method of manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-08 | — | — | US | disclosed |
| US-9470980-B2 | Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device | FUJIFILM CORPORATION (JP) | 2016-10-18 | — | — | US | disclosed |
| US-20160291461-A1 | PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD | FUJIFILM CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9448477-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9448482-B2 | Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9423690-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-20160240816-A1 | LAMINATE, KIT FOR MANUFACTURING ORGANIC SEMICONDUCTOR, AND RESIST COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR | FUJIFILM CORPORATION (JP) | 2016-08-18 | — | — | US | disclosed |
| US-9417523-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive composition used therein, resist film, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-16 | — | — | US | disclosed |
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20140349224-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140342275-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-11-20 | — | — | US | disclosed |
| US-8822129-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2014-09-02 | — | — | US | disclosed |
| US-20140212811-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-20140030643-A1 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-01-30 | — | — | US | disclosed |
| US-8637222-B2 | Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-8557499-B2 | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2013-10-15 | — | — | US | disclosed |
| WO-2013125733-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-08-29 | — | — | WO | disclosed |
| US-20130084438-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130045440-A1 | RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKING NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, NANOIMPRINT MOLD, AND PHOTOMASK | FUJIFILM CORPORATION (JP) | 2013-02-21 | — | — | US | disclosed |