SCHEMBL1482227

SCHEMBL1482227

C=C(CC12CC3CC(CC(C3)C1CC)C2)C(=O)O

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.31
HSD11B1 P28845 1/20 0.31
KMT2A Q03164 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30
EPHX2 P34913 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6559876 0.86 HSD11B1 (0.33) ALDH1A1HSD11B1
SCHEMBL2832307 0.81 ALDH1A1 (0.34) ALDH1A1SMN1; SMN2HSD11B1NPSR1
SCHEMBL2220426 0.75 KMT2A (0.32) ALDH1A1SMN1; SMN2HSD11B1KMT2AEPHX2
SCHEMBL1071740 0.73 GRIN2D (0.31)
SCHEMBL20920211 0.72 ALDH1A1 (0.36) ALDH1A1KMT2AEPHX2
SCHEMBL19898983 0.72 HSD11B1 (0.34) ALDH1A1HSD11B1
SCHEMBL704030 0.71 ALDH1A1 (0.50) ALDH1A1SMN1; SMN2HSD11B1KMT2ANPSR1
SCHEMBL17322714 0.71 ALDH1A1 (0.33) ALDH1A1SMN1; SMN2HSD11B1KMT2AEPHX2
SCHEMBL3179851 0.70 KMT2A (0.35) ALDH1A1SMN1; SMN2HSD11B1KMT2AEPHX2
SCHEMBL30477996 0.69 HSD11B1 (0.46) ALDH1A1SMN1; SMN2HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8632948-B2 Positive-working photoimageable bottom antireflective coating AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-01-21 US disclosed
EP-2483745-A1 POSITIVE-WORKING PHOTOIMAGEABLE BOTTOM ANTIREFLECTIVE COATING AZ Electronic Materials USA Corp. (US) 2012-08-08 EP disclosed
WO-2011039560-A1 POSITIVE-WORKING PHOTOIMAGEABLE BOTTOM ANTIREFLECTIVE COATING AZ ELECTRONIC MATERIALS USA CORP. (US) 2011-04-07 WO disclosed
US-20110076626-A1 Positive-Working Photoimageable Bottom Antireflective Coating MERCK PATENT GMBH (DE) 2011-03-31 US disclosed
US-7241552-B2 Resist composition comprising photosensitive polymer having lactone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-07-10 US disclosed
US-7045267-B2 Resist composition comprising photosensitive polymer having lactone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-16 US disclosed
US-6861197-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-01 US disclosed
US-20050008975-A1 Chemical resistance; bonding strength; accuracte patterns; photolithography YOON KWANG-SUB (KR) 2005-01-13 US disclosed
US-20040018442-A1 Resist composition comprising photosensitive polymer having lactone in its backbone YOON KWANG-SUB (KR) 2004-01-29 US disclosed
US-6537727-B2 Improved dry etching resistance, adhesiveness to underlying material layers, line edge roughness of line patterns, contrast characteristics SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-03-25 US disclosed
US-20030008231-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-09 US disclosed
US-20020042016-A1 Resist composition comprising photosensitive polymer having loctone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-04-11 US disclosed