SCHEMBL14827322

SCHEMBL14827322

COc1ccc2c3c(cccc13)C(C)C2C

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
USP2 O75604 4/20 0.45
CASP1 P29466 2/20 0.45
CASP7 P55210 2/20 0.45
HSD17B10 Q99714 2/20 0.45
HSP90AA1 P07900 1/20 0.45
HSP90AB1 P08238 1/20 0.45
ALOX15 P16050 1/20 0.45
KMT2A Q03164 6/20 0.45
MEN1 O00255 5/20 0.45
POLB P06746 2/20 0.45
PRMT1 Q99873 1/20 0.45
MAPT P10636 7/20 0.44
GAA P10253 5/20 0.44
KDM4E B2RXH2 4/20 0.44
ALDH1A1 P00352 3/20 0.44
LMNA P02545 1/20 0.44
PABPC1 P11940 1/20 0.44
XBP1 P17861 1/20 0.44
NFKB1 P19838 1/20 0.44
HTT P42858 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17452129 0.80 HTR1A (0.35) USP2CASP1CASP7HSD17B10HSP90AA1
SCHEMBL28992439 0.79 NQO1 (0.46) USP2CASP1CASP7HSD17B10HSP90AA1
SCHEMBL23864884 0.77 SLC22A6 (0.41) HSD17B10KMT2APOLBMAPTGAA
SCHEMBL14827324 0.77 SLC22A6 (0.41) HSD17B10KMT2APOLBMAPTGAA
SCHEMBL14827269 0.77 PRMT1 (0.31) KMT2APOLBPRMT1MAPTKDM4E
SCHEMBL1193308 0.76 KMT2A (0.52) USP2CASP1CASP7HSD17B10HSP90AA1
SCHEMBL14827275 0.74
SCHEMBL17452125 0.72 HTR1A (0.32) HTR1AHTR1DHTR2CHTR7HTR5A
SCHEMBL23864885 0.71 MAPT (0.36) USP2CASP1CASP7HSD17B10HSP90AA1
SCHEMBL24616792 0.71 HTR2A (0.38) USP2CASP1CASP7HSD17B10HSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11914300-B2 Manufacturing method of semiconductor chip, and kit FUJIFILM CORPORATION (JP) 2024-02-27 US disclosed
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230333478-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT FUJIFILM CORPORATION (JP) 2023-10-19 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
US-11733611-B2 Pattern forming method, method for producing electronic device, and kit FUJIFILM CORPORATION (JP) 2023-08-22 US disclosed
US-20230229078-A1 CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2023-07-20 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-11693321-B2 Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-04 US disclosed
US-20230148344-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND FUJIFILM CORPORATION (JP) 2023-05-11 US disclosed
US-20150147688-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-28 US disclosed
US-20150140484-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-21 US disclosed
US-20150132687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-14 US disclosed
US-20150132688-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2015-05-14 US disclosed
US-20140363758-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-12-11 US disclosed
US-20140349224-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-11-27 US disclosed
US-8822129-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2014-09-02 US disclosed
US-20140212796-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-31 US disclosed
US-20140212811-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-31 US disclosed
US-20130084438-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 USP2 2627/4885CASP1 2261/4885CASP7 2563/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.