SCHEMBL14827324

SCHEMBL14827324

CC(=O)Oc1ccc2c3c(cccc13)C(C)C2C

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC22A6 Q4U2R8 1/20 0.41
HTT P42858 1/20 0.41
KDM4E B2RXH2 7/20 0.40
TDP1 Q9NUW8 3/20 0.40
CYP3A4 P08684 1/20 0.40
ALOX12 P18054 1/20 0.40
MAPK1 P28482 1/20 0.39
GAA P10253 3/20 0.39
MAPT P10636 2/20 0.39
NR3C1 P04150 1/20 0.39
ALDH1A1 P00352 3/20 0.39
TSHR P16473 2/20 0.39
BLM P54132 2/20 0.39
HSD17B10 Q99714 2/20 0.39
ESR1 P03372 1/20 0.39
ITGB3 P05106 1/20 0.39
ITGA2B P08514 1/20 0.39
HMGB1 P09429 1/20 0.39
HPGD P15428 1/20 0.39
GGT1 P19440 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23864884 1.00 SLC22A6 (0.41) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL19779450 0.83 MAPT (0.39) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL14827322 0.77 USP2 (0.45) HTTKDM4ETDP1CYP3A4ALOX12
SCHEMBL3174222 0.76 MAPT (0.55) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL4444465 0.76 HTT (0.61) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL30002719 0.76 HTT (0.61) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL6688920 0.76 HTT (0.56) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL26453223 0.75 GAA (0.36) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL24490888 0.75 MAPT (0.34) SLC22A6HTTKDM4ETDP1CYP3A4
SCHEMBL926733 0.75 SLC22A6 (0.42) SLC22A6HTTKDM4ETDP1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 90 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11914300-B2 Manufacturing method of semiconductor chip, and kit FUJIFILM CORPORATION (JP) 2024-02-27 US disclosed
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230333478-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT FUJIFILM CORPORATION (JP) 2023-10-19 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
US-11733611-B2 Pattern forming method, method for producing electronic device, and kit FUJIFILM CORPORATION (JP) 2023-08-22 US disclosed
US-20230229078-A1 CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2023-07-20 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-20150147688-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-28 US disclosed
US-20150140484-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-21 US disclosed
US-20150132687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-14 US disclosed
US-20150132688-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2015-05-14 US disclosed
US-20140363758-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-12-11 US disclosed
US-20140349224-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-11-27 US disclosed
US-8822129-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2014-09-02 US disclosed
US-20140212796-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-31 US disclosed
US-20140212811-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-31 US disclosed
US-20130084438-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-04-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 SLC22A6 3807/4885HTT 3977/4885KDM4E 3311/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.