Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14982569 | 0.84 | SCN1A (0.32) | HSD11B1 | |
| SCHEMBL25509617 | 0.84 | HSD11B1 (0.34) | HSD11B1 | |
| SCHEMBL441423 | 0.84 | ALOX15 (0.40) | HSD11B1 | |
| SCHEMBL21470309 | 0.83 | — | — | |
| SCHEMBL13564185 | 0.82 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL4903353 | 0.82 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL18744851 | 0.81 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL19929340 | 0.81 | GLA (0.31) | HSD11B1 | |
| SCHEMBL119735 | 0.79 | HSD11B1 (0.32) | HSD11B1 | |
| SCHEMBL18720466 | 0.79 | ALDH1A1 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20190258160-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-22 | — | — | US | disclosed |
| US-20180081272-A1 | THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-9902875-B2 | Composition for forming a coating type BPSG film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9627204-B2 | Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-18 | — | — | US | disclosed |
| US-9624356-B2 | Ultraviolet absorber, composition for forming a resist under layer film, and patterning process | SHIN-ETSU CHEMIAL CO., LTD (JP) | 2017-04-18 | — | — | US | disclosed |
| US-9580623-B2 | Patterning process using a boron phosphorus silicon glass film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-02-28 | — | — | US | disclosed |
| WO-2013099662-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | WO | disclosed |
| WO-2013047091-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | WO | disclosed |
| WO-2013047396-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | WO | disclosed |