Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.32 |
| ▸ | OPRM1 | P35372 | 3/20 | 0.31 |
| ▸ | OPRD1 | P41143 | 3/20 | 0.31 |
| ▸ | OPRK1 | P41145 | 3/20 | 0.31 |
| ▸ | ALOX5AP | P20292 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17320565 | 0.90 | OPRM1 (0.32) | OPRM1OPRD1OPRK1 | |
| SCHEMBL14476933 | 0.87 | ALDH1A1 (0.34) | HSD11B1 | |
| SCHEMBL17322538 | 0.87 | ALOX5AP (0.33) | HSD11B1ALOX5AP | |
| SCHEMBL4862977 | 0.85 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL13564204 | 0.85 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL14982576 | 0.85 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL13779647 | 0.85 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL18744851 | 0.85 | HSD11B1 (0.31) | HSD11B1 | |
| SCHEMBL13564623 | 0.84 | EPHX2 (0.36) | — | |
| SCHEMBL17320564 | 0.84 | ALOX5AP (0.31) | HSD11B1ALOX5AP |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11860540-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-02 | — | — | US | disclosed |
| US-20230350296-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230314944-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20230288804-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-14 | — | — | US | disclosed |
| US-11709427-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20230161255-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161252-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-8450042-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-28 | — | — | US | disclosed |
| US-8426115-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| WO-2013039243-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-03-21 | — | — | WO | disclosed |
| US-8211618-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-20120058428-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20110033803-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20100304297-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100227273-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100159392-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709427-B2 | Positive resist composition and pattern forming process | EWSR1, PARG, VIM | HSD11B1 3275/4885OPRM1 1278/4885OPRD1 1655/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.