Known targets — ChEMBL curated mechanism
GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHMGCRMMP1MMP13MMP7MMP8PTGS1PTGS2ileSpolrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Fluoride Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride Ion SCHEMBL6298939 | 0.89 | — | — | |
| Fluoride Ion SCHEMBL7639855 | 0.89 | — | — | |
| Fluoride Ion SCHEMBL1645847 | 0.87 | — | — | |
| Fluoride Ion SCHEMBL28607540 | 0.87 | CA4 (0.33) | — | |
| Fluoride Ion SCHEMBL2183651 | 0.87 | — | — | |
| Fluoride Ion SCHEMBL37225 | 0.87 | — | — | |
| Fluoride Ion SCHEMBL27440669 | 0.82 | — | — | |
| Fluoride Ion SCHEMBL23200395 | 0.75 | — | — | |
| Fluoride Ion SCHEMBL12487545 | 0.75 | — | — | |
| Fluoride Ion SCHEMBL15194436 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 433 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115102022-A | Praseodymium ion doped fluorine aluminum calcium lithium type visible wave band ultrafast laser crystal and growth method and application thereof | 同济大学 | 2022-09-23 | — | — | CN | claimed |
| CN-109799577-B | Semiconductor device and method for providing vertical optical via for semiconductor substrate | 三星电子株式会社 | 2022-07-12 | — | — | CN | claimed |
| US-10935743-B2 | Vertical optical via and method of fabrication | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-03-02 | — | — | US | claimed |
| US-20200158970-A1 | VERTICAL OPTICAL VIA AND METHOD OF FABRICATION | SAMSUNG ELECTRONICS CO LTD (KR) | 2020-05-21 | — | — | US | claimed |
| US-10585254-B2 | Vertical optical via and method of fabrication | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-03-10 | — | — | US | claimed |
| CN-109799577-A | Semiconductor devices and the method for vertical optical through-hole is provided for semiconductor substrate | 三星电子株式会社 | 2019-05-24 | — | — | CN | claimed |
| US-20190154933-A1 | VERTICAL OPTICAL VIA AND METHOD OF FABRICATION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-05-23 | — | — | US | claimed |
| US-9995841-B2 | Compact scintillation detector | SCHLUMBERGER TECHNOLOGY CORPORATION (US) | 2018-06-12 | — | — | US | claimed |
| US-20170363768-A1 | COMPACT SCINTILLATION DETECTOR | SCHLUMBERGER TECHNOLOGY CORPORATION | 2017-12-21 | — | — | US | claimed |
| EP-2256177-B1 | SCINTILLATOR FOR NEUTRON DETECTION AND NEUTRON DETECTOR | TOKUYAMA CORP (JP) | 2016-01-13 | — | — | EP | claimed |
| US-6876689-B2 | Narrow spectral bandwidth tunable pulsed solid-state laser system | LIGHT AGE, INC. (US) | 2005-04-05 | — | — | US | claimed |
| US-6714280-B2 | Projection optical system, projection exposure apparatus, and projection exposure method | NIKON CORPORATION (JP) | 2004-03-30 | — | — | US | claimed |
| US-6556353-B2 | Projection optical system, projection exposure apparatus, and projection exposure method | NIKON CORPORATION (JP) | 2003-04-29 | — | — | US | claimed |
| US-20030063393-A1 | Projection optical system, projection exposure apparatus, and projection exposure method | NIKON CORPORATION (JP) | 2003-04-03 | — | — | US | claimed |
| US-20020186355-A1 | Projection optical system, projection exposure apparatus, and projection exposure method | NIKON CORPORATION (JP) | 2002-12-12 | — | — | US | claimed |
| US-6451507-B1 | FLUORIDE CRYSTAL MATERIALS | NIKON CORPORATION (JP) | 2002-09-17 | — | — | US | claimed |
| EP-1237043-A2 | Projection optical system, projection exposure apparatus, and projection exposure method | Nikon Corporation (JP) | 2002-09-04 | — | — | EP | claimed |
| EP-1235092-A2 | Projection optical system, projection apparatus and projection exposure method | Nikon Corporation (JP) | 2002-08-28 | — | — | EP | claimed |
| US-6377338-B1 | Exposure apparatus and method | NIKON CORPORATION (JP) | 2002-04-23 | — | — | US | claimed |
| US-5353262-A | Optical transducer and method of use | GENERAL ELECTRIC COMPANY (US) | 1994-10-04 | — | — | US | claimed |