SCHEMBL1506674

SCHEMBL1506674

C=C(C)C(=O)OCCO.CC(C)(C)OC=Cc1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 3/20 0.37
POLB P06746 2/20 0.37
APEX1 P27695 1/20 0.37
HTT P42858 1/20 0.37
PPARA Q07869 2/20 0.36
GLA P06280 1/20 0.36
MEN1 O00255 3/20 0.35
KMT2A Q03164 3/20 0.35
CYP2C19 P33261 1/20 0.35
AKR1B10 O60218 1/20 0.35
AKR1B1 P15121 1/20 0.35
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
THRB P10828 1/20 0.34
EGFR P00533 1/20 0.34
LMNA P02545 3/20 0.34
KDM4E B2RXH2 3/20 0.34
RAB9A P51151 2/20 0.34
L3MBTL1 Q9Y468 2/20 0.34
NPC1 O15118 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7205677 0.83 TDP1 (0.41) TDP1POLBAPEX1HTTGLA
Cinnamic Acid SCHEMBL28185054 0.82 HDAC3 (0.53) TDP1POLBAPEX1HTTGLA
Styrene SCHEMBL409075 0.80 TDP1 (0.43) TDP1POLBAPEX1HTTGLA
Styrene SCHEMBL9305623 0.80 TDP1 (0.43) TDP1POLBAPEX1HTTGLA
SCHEMBL5843377 0.80 TDP1 (0.44) TDP1POLBAPEX1HTTGLA
SCHEMBL3007714 0.79 THRB (0.42) TDP1POLBAPEX1HTTGLA
SCHEMBL4968472 0.79 PPARG (0.39) TDP1POLBAPEX1HTTGLA
SCHEMBL9305618 0.79 PAM (0.45) TDP1POLBAPEX1HTTGLA
SCHEMBL8171290 0.79 POLB (0.40) TDP1POLBAPEX1HTTGLA
Styrene SCHEMBL11239895 0.78 TDP1 (0.41) TDP1POLBAPEX1HTTGLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8158326-B2 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-17 US disclosed
US-7914965-B2 Resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2011-03-29 US disclosed
US-20090075202-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND METHOD OF PATTERN FORMATION WITH THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-03-19 US disclosed
US-7449573-B2 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJIFILM CORPORATION (JP) 2008-11-11 US disclosed
EP-1662317-A2 Resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. (JP) 2006-05-31 EP disclosed
US-20060068320-A1 Resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2006-03-30 US disclosed
US-20060040203-A1 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJI PHOTO FILM CO., LTD. 2006-02-23 US disclosed
US-6902862-B2 Resist composition FUJI PHOTO FILM CO., LTD. (JP) 2005-06-07 US disclosed
US-20040058272-A1 Resist composition FUJI PHOTO FILM CO., LTD. 2004-03-25 US disclosed