SCHEMBL15219007

SCHEMBL15219007

NC(=O)OCC(F)(F)S(=O)(=O)O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.39
HSD17B10 Q99714 1/20 0.39
ALOX15 P16050 1/20 0.36
ALDH1A1 P00352 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
CA9 Q16790 1/20 0.32
HTT P42858 1/20 0.31
TSHR P16473 3/20 0.30
CHRM2 P08172 1/20 0.30
CHRM4 P08173 1/20 0.30
HTR1A P08908 1/20 0.30
CHRM5 P08912 1/20 0.30
CHRM1 P11229 1/20 0.30
CHRNB2 P17787 1/20 0.30
CHRM3 P20309 1/20 0.30
CYP2C19 P33261 1/20 0.30
CHRNA7 P36544 1/20 0.30
CHRNA4 P43681 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL687031 0.78 ALDH1A1 (0.37) LMNAHSD17B10ALDH1A1L3MBTL1HTT
SCHEMBL14228085 0.78 ALDH1A1 (0.34) LMNAALDH1A1L3MBTL1HTTTSHR
SCHEMBL8927975 0.78 ALDH1A1 (0.34) ALDH1A1L3MBTL1HTT
SCHEMBL11917863 0.75 HTT (0.38) ALDH1A1L3MBTL1HTT
SCHEMBL12994724 0.75 ALDH1A1 (0.40) ALDH1A1L3MBTL1CYP2C19
SCHEMBL8927971 0.75 ALDH1A1 (0.32) ALDH1A1L3MBTL1CA1CA2
SCHEMBL2217884 0.75 PRKCA (0.35) ALDH1A1L3MBTL1
SCHEMBL10246540 0.75 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL17403610 0.75 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL15071771 0.75 ALDH1A1 (0.32) ALDH1A1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10698317-B2 Underlayer material for photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-06-30 US disclosed
US-20190265590-A1 Underlayer Material for Photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2019-08-29 US disclosed
US-9057948-B2 Resist composition for EUV or EB, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-16 US disclosed
US-8956801-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-02-17 US disclosed
US-20130260319-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-03 US disclosed
US-20130224656-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-29 US disclosed